Solution-Processed HfO2/Y2O3 Multilayer Si-Based MOS Capacitors Photoactivated by Deep-Ultraviolet Radiation

Ashwag Almaimouni; Arwa Kutbee; Asmaa Mudhaffar; Hala Al-Jawhari

doi:10.1007/s11664-022-09738-w

Solution-Processed HfO2/Y2O3 Multilayer Si-Based MOS Capacitors Photoactivated by Deep-Ultraviolet Radiation

Ashwag Almaimouni, Arwa Kutbee, Asmaa Mudhaffar, Hala Al-Jawhari

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Fabrication of high-quality sol-gel thin films at low-temperature and low-cost is becoming a necessity to realize the full potential of flexible and printed electronics. In this study, we demonstrate a solution-processed metal-oxide-semiconductor (MOS) capacitor deposited on a heavily doped p-type silicon substrate by employing a multilayer dielectric stack of HfO2/Y2O3. The fabrication of the dielectric films was carried out using fast and low-temperature photoactivation treatment under deep-ultraviolet (DUV). Structural and optical properties of multilayers were systemically examined showing the amorphous structural phase with high optical transmission. Electrical measurements of the DUV photoactivated MOS capacitors showed comparable electrical properties to conventional high-temperature thermal annealing. These included a dielectric constant of 10.81 (at 100 kHz), a high areal capacitance of 89.49 nF/cm2 and a low leakage current of ~10−9 A/cm2.

Original language	English (US)
Pages (from-to)	4944-4951
Number of pages	8
Journal	Journal of Electronic Materials
Volume	51
Issue number	9
DOIs	https://doi.org/10.1007/s11664-022-09738-w
State	Published - Jun 16 2022
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-09-14
Acknowledgements: The authors would like to thank Dr. Mrinal Hota (Department of Materials Science and Engineering, KAUST, KSA) for his help with the SEM imaging.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "Solution-Processed HfO2/Y2O3 Multilayer Si-Based MOS Capacitors Photoactivated by Deep-Ultraviolet Radiation",

abstract = "Fabrication of high-quality sol-gel thin films at low-temperature and low-cost is becoming a necessity to realize the full potential of flexible and printed electronics. In this study, we demonstrate a solution-processed metal-oxide-semiconductor (MOS) capacitor deposited on a heavily doped p-type silicon substrate by employing a multilayer dielectric stack of HfO2/Y2O3. The fabrication of the dielectric films was carried out using fast and low-temperature photoactivation treatment under deep-ultraviolet (DUV). Structural and optical properties of multilayers were systemically examined showing the amorphous structural phase with high optical transmission. Electrical measurements of the DUV photoactivated MOS capacitors showed comparable electrical properties to conventional high-temperature thermal annealing. These included a dielectric constant of 10.81 (at 100 kHz), a high areal capacitance of 89.49 nF/cm2 and a low leakage current of ~10−9 A/cm2.",

author = "Ashwag Almaimouni and Arwa Kutbee and Asmaa Mudhaffar and Hala Al-Jawhari",

note = "KAUST Repository Item: Exported on 2022-09-14 Acknowledgements: The authors would like to thank Dr. Mrinal Hota (Department of Materials Science and Engineering, KAUST, KSA) for his help with the SEM imaging. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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language = "English (US)",

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T1 - Solution-Processed HfO2/Y2O3 Multilayer Si-Based MOS Capacitors Photoactivated by Deep-Ultraviolet Radiation

AU - Almaimouni, Ashwag

AU - Kutbee, Arwa

AU - Mudhaffar, Asmaa

AU - Al-Jawhari, Hala

N1 - KAUST Repository Item: Exported on 2022-09-14 Acknowledgements: The authors would like to thank Dr. Mrinal Hota (Department of Materials Science and Engineering, KAUST, KSA) for his help with the SEM imaging. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2022/6/16

Y1 - 2022/6/16

N2 - Fabrication of high-quality sol-gel thin films at low-temperature and low-cost is becoming a necessity to realize the full potential of flexible and printed electronics. In this study, we demonstrate a solution-processed metal-oxide-semiconductor (MOS) capacitor deposited on a heavily doped p-type silicon substrate by employing a multilayer dielectric stack of HfO2/Y2O3. The fabrication of the dielectric films was carried out using fast and low-temperature photoactivation treatment under deep-ultraviolet (DUV). Structural and optical properties of multilayers were systemically examined showing the amorphous structural phase with high optical transmission. Electrical measurements of the DUV photoactivated MOS capacitors showed comparable electrical properties to conventional high-temperature thermal annealing. These included a dielectric constant of 10.81 (at 100 kHz), a high areal capacitance of 89.49 nF/cm2 and a low leakage current of ~10−9 A/cm2.

AB - Fabrication of high-quality sol-gel thin films at low-temperature and low-cost is becoming a necessity to realize the full potential of flexible and printed electronics. In this study, we demonstrate a solution-processed metal-oxide-semiconductor (MOS) capacitor deposited on a heavily doped p-type silicon substrate by employing a multilayer dielectric stack of HfO2/Y2O3. The fabrication of the dielectric films was carried out using fast and low-temperature photoactivation treatment under deep-ultraviolet (DUV). Structural and optical properties of multilayers were systemically examined showing the amorphous structural phase with high optical transmission. Electrical measurements of the DUV photoactivated MOS capacitors showed comparable electrical properties to conventional high-temperature thermal annealing. These included a dielectric constant of 10.81 (at 100 kHz), a high areal capacitance of 89.49 nF/cm2 and a low leakage current of ~10−9 A/cm2.

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DO - 10.1007/s11664-022-09738-w

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JF - Journal of Electronic Materials

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ER -

Solution-Processed HfO2/Y2O3 Multilayer Si-Based MOS Capacitors Photoactivated by Deep-Ultraviolet Radiation

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