Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity

Pichaya Pattanasattayavong; Stephan Rossbauer; Stuart Thomas; John G. Labram; Henry J. Snaith; Thomas D. Anthopoulos

doi:10.1063/1.4757602

Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity

Pichaya Pattanasattayavong^*, Stephan Rossbauer, Stuart Thomas, John G. Labram, Henry J. Snaith, Thomas D. Anthopoulos

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We report the fabrication of light-sensing thin-film transistors based on solution processed films of ZnO, as the channel material, functionalized with an organic dye as the light sensitizer. Due to the presence of the dye, the hybrid devices show exceptionally high photosensitivity to green light of 10 ⁶ and a maximum photoresponsivity on the order of 10 ⁴ A/W. The high performance is argued to be the result of the grain barrier limited nature of electron transport across the polycrystalline ZnO film and its dependence on charge carrier density upon illumination with green light. In addition to the excellent photoresponsivity and signal gain, the hybrid ZnO-dye photoactive layer exhibits high optical transparency. The unique combination of simple device fabrication and distinctive physical characteristics, such as optical transparency, renders the technology attractive for application in large-area transparent photodetectors.

Original language	English (US)
Article number	074507
Journal	Journal of Applied Physics
Volume	112
Issue number	7
DOIs	https://doi.org/10.1063/1.4757602
State	Published - Oct 1 2012
Externally published	Yes

Bibliographical note

Funding Information:
P.P. is funded by Anandamahidol Foundation, Thailand. This work was funded by the Engineering and Physical Sciences Research Council (EPSRC) under Grant Nos. EP/F023200 and EP/F065884/1, Research Councils UK (RCUK), and European Research Council (ERC).

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity",

abstract = "We report the fabrication of light-sensing thin-film transistors based on solution processed films of ZnO, as the channel material, functionalized with an organic dye as the light sensitizer. Due to the presence of the dye, the hybrid devices show exceptionally high photosensitivity to green light of 10 6 and a maximum photoresponsivity on the order of 10 4 A/W. The high performance is argued to be the result of the grain barrier limited nature of electron transport across the polycrystalline ZnO film and its dependence on charge carrier density upon illumination with green light. In addition to the excellent photoresponsivity and signal gain, the hybrid ZnO-dye photoactive layer exhibits high optical transparency. The unique combination of simple device fabrication and distinctive physical characteristics, such as optical transparency, renders the technology attractive for application in large-area transparent photodetectors.",

author = "Pichaya Pattanasattayavong and Stephan Rossbauer and Stuart Thomas and Labram, {John G.} and Snaith, {Henry J.} and Anthopoulos, {Thomas D.}",

note = "Funding Information: P.P. is funded by Anandamahidol Foundation, Thailand. This work was funded by the Engineering and Physical Sciences Research Council (EPSRC) under Grant Nos. EP/F023200 and EP/F065884/1, Research Councils UK (RCUK), and European Research Council (ERC).",

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AU - Thomas, Stuart

AU - Labram, John G.

AU - Snaith, Henry J.

AU - Anthopoulos, Thomas D.

N1 - Funding Information: P.P. is funded by Anandamahidol Foundation, Thailand. This work was funded by the Engineering and Physical Sciences Research Council (EPSRC) under Grant Nos. EP/F023200 and EP/F065884/1, Research Councils UK (RCUK), and European Research Council (ERC).

PY - 2012/10/1

Y1 - 2012/10/1

N2 - We report the fabrication of light-sensing thin-film transistors based on solution processed films of ZnO, as the channel material, functionalized with an organic dye as the light sensitizer. Due to the presence of the dye, the hybrid devices show exceptionally high photosensitivity to green light of 10 6 and a maximum photoresponsivity on the order of 10 4 A/W. The high performance is argued to be the result of the grain barrier limited nature of electron transport across the polycrystalline ZnO film and its dependence on charge carrier density upon illumination with green light. In addition to the excellent photoresponsivity and signal gain, the hybrid ZnO-dye photoactive layer exhibits high optical transparency. The unique combination of simple device fabrication and distinctive physical characteristics, such as optical transparency, renders the technology attractive for application in large-area transparent photodetectors.

AB - We report the fabrication of light-sensing thin-film transistors based on solution processed films of ZnO, as the channel material, functionalized with an organic dye as the light sensitizer. Due to the presence of the dye, the hybrid devices show exceptionally high photosensitivity to green light of 10 6 and a maximum photoresponsivity on the order of 10 4 A/W. The high performance is argued to be the result of the grain barrier limited nature of electron transport across the polycrystalline ZnO film and its dependence on charge carrier density upon illumination with green light. In addition to the excellent photoresponsivity and signal gain, the hybrid ZnO-dye photoactive layer exhibits high optical transparency. The unique combination of simple device fabrication and distinctive physical characteristics, such as optical transparency, renders the technology attractive for application in large-area transparent photodetectors.

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Solution-processed dye-sensitized ZnO phototransistors with extremely high photoresponsivity

Abstract

Bibliographical note

ASJC Scopus subject areas

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