Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors

Fei Cheng; Emanuele Verrelli; Fahad A. Alharthi; Satyajit Das; Thomas D. Anthopoulos; Khue T. Lai; Neil T. Kemp; Mary O'Neill; Stephen M. Kelly

doi:10.1039/d0ra04445h

Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors

Fei Cheng, Emanuele Verrelli, Fahad A. Alharthi, Satyajit Das, Thomas D. Anthopoulos, Khue T. Lai, Neil T. Kemp, Mary O'Neill, Stephen M. Kelly

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A prototype solution-processed n-type thin film transistor was fabricated. The film incorporates a dielectric layer prepared from solution-processed and photopolymerised inorganic/organic TiO$_{2}$ nanorods and zinc oxide as the semiconductor, also deposited from solution.

Original language	English (US)
Pages (from-to)	25540-25546
Number of pages	7
Journal	RSC Advances
Volume	10
Issue number	43
DOIs	https://doi.org/10.1039/d0ra04445h
State	Published - Jul 6 2020
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research leading to these results received funding from the EPSRC under the grant agreement EP/J001597/1 and
Researchers Supporting Project number (RSP-2020/160), King Saud University, Riyadh, Saudi Arabia. T. D. A. acknowledges
the King Abdullah University of Science and Technology for Financial support

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10.1039/d0ra04445h

https://repository.kaust.edu.sa/bitstream/10754/664071/1/d0ra04445h.pdf

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@article{f1924e12db694e978d352d3b1128d546,

title = "Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors",

abstract = "A prototype solution-processed n-type thin film transistor was fabricated. The film incorporates a dielectric layer prepared from solution-processed and photopolymerised inorganic/organic TiO$_{2}$ nanorods and zinc oxide as the semiconductor, also deposited from solution.",

author = "Fei Cheng and Emanuele Verrelli and Alharthi, {Fahad A.} and Satyajit Das and Anthopoulos, {Thomas D.} and Lai, {Khue T.} and Kemp, {Neil T.} and Mary O'Neill and Kelly, {Stephen M.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The research leading to these results received funding from the EPSRC under the grant agreement EP/J001597/1 and Researchers Supporting Project number (RSP-2020/160), King Saud University, Riyadh, Saudi Arabia. T. D. A. acknowledges the King Abdullah University of Science and Technology for Financial support",

year = "2020",

month = jul,

day = "6",

doi = "10.1039/d0ra04445h",

language = "English (US)",

volume = "10",

pages = "25540--25546",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "ROYAL SOC CHEMISTRY",

number = "43",

}

TY - JOUR

T1 - Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors

AU - Cheng, Fei

AU - Verrelli, Emanuele

AU - Alharthi, Fahad A.

AU - Das, Satyajit

AU - Anthopoulos, Thomas D.

AU - Lai, Khue T.

AU - Kemp, Neil T.

AU - O'Neill, Mary

AU - Kelly, Stephen M.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The research leading to these results received funding from the EPSRC under the grant agreement EP/J001597/1 and Researchers Supporting Project number (RSP-2020/160), King Saud University, Riyadh, Saudi Arabia. T. D. A. acknowledges the King Abdullah University of Science and Technology for Financial support

PY - 2020/7/6

Y1 - 2020/7/6

N2 - A prototype solution-processed n-type thin film transistor was fabricated. The film incorporates a dielectric layer prepared from solution-processed and photopolymerised inorganic/organic TiO$_{2}$ nanorods and zinc oxide as the semiconductor, also deposited from solution.

AB - A prototype solution-processed n-type thin film transistor was fabricated. The film incorporates a dielectric layer prepared from solution-processed and photopolymerised inorganic/organic TiO$_{2}$ nanorods and zinc oxide as the semiconductor, also deposited from solution.

UR - http://hdl.handle.net/10754/664071

UR - http://xlink.rsc.org/?DOI=D0RA04445H

U2 - 10.1039/d0ra04445h

DO - 10.1039/d0ra04445h

M3 - Article

SN - 2046-2069

VL - 10

SP - 25540

EP - 25546

JO - RSC Advances

JF - RSC Advances

IS - 43

ER -

Solution-processable and photopolymerisable TiO2 nanorods as dielectric layers for thin film transistors

Abstract

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