Solution-Doped Polysilicon Passivating Contacts for Silicon Solar Cells

Xinbo Yang, Jingxuan Kang, Wenzhu Liu, Xiaohong Zhang, Stefaan De Wolf

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


In this work, we present a simple and efficient solution-doping process for preparing high-quality polycrystalline silicon (poly-Si)-based passivating contacts. Commercial phosphorus or boron-doping solutions are spin-coated on crystalline silicon (c-Si) wafers that feature SiO2/poly-Si layers; the doping process is then activated by thermal annealing at high temperatures in a nitrogen atmosphere. With optimized n- and p-type solution doping and thermal annealing, n- and p-type poly-Si passivating contacts featuring simultaneously a low contact recombination parameter (J0c) of 2.4 and 12 fA/cm2 and a low contact resistivity (ρc) of 29 and 20 mΩ·cm2 are achieved, respectively. Taking advantage of the single-sided nature of these solution-doping processes, c-Si solar cells with poly-Si passivating contacts of opposite polarity on the respective wafer surfaces are fabricated using a simple coannealing process, achieving the best power conversion efficiency (PCE) of 18.5% on a planar substrate. Overall, the solution-doping method is demonstrated to be a simple and promising alternative to gas/ion implantation doping for poly-Si passivating-contact manufacturing.
Original languageEnglish (US)
Pages (from-to)8455-8460
Number of pages6
JournalACS Applied Materials & Interfaces
Issue number7
StatePublished - Feb 16 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-11-24
Acknowledged KAUST grant number(s): OSR-CRGURF/1/3383
Acknowledgements: This work was financially supported by the King Abdullah University of Science & Technology (KAUST) through the Competitive Research Grant under award no. OSR-CRGURF/1/3383 and the start-up funding from the Soochow University.

ASJC Scopus subject areas

  • General Materials Science


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