Solar cell and method of manufacturing a solar cell

The present invention relates to a solar cell with a crystalline silicon core, at least one n- or p-doped silicon or silicon alloy layer and at least one of silicon or a silicon alloy existing passivation layer between at least one surface of the silicon core and the at least one n- or p-doped silicon or silicon alloy layer. Furthermore, the invention relates to a method for manufacturing such a solar cell. It is the object of the present invention, a solar cell of the above-mentioned type to be provided, which is characterized by an increased open circuit voltage. A further object is to provide a method for manufacturing such a solar cell. This object is on the one hand solved by a solar cell of the genus listed above, which is characterized in that the passivating layer of silicon mono-hydride molecular groups (Si-H) and silicon-di-hydride molecular groups (Si-H 2), wherein a ratio (Q) of the number of silicon-di-hydride molecular groups (n Si-H2) to the total number of silicon-di-hydride groups of molecules and silicon mono-hydride molecular groups (n Si-H) + (n Si -H) is greater than 0.4 in a volume comparison of the passivation layer

The object is further achieved by a method for manufacturing a solar cell of the above-mentioned type, which is characterized in that the passivation layer is deposited in several sub-steps of a plasma discharge process such that the produced passivation layer of silicon mono-hydride molecular groups (Si-H) and having and silicon-di-hydride molecular groups (Si-H 2) a ratio (Q) of the number of silicon-di-hydride molecular groups (n Si-H2) to the total number of silicon-di-hydride groups of molecules and silicon mono-hydride molecular groups (n Si-H2 + Si-H n) is greater than 0.4 in a volume comparison of the passivation layer