Abstract
The present invention relates to a solar cell having a crystalline silicon core, at least one n- or p-doped silicon or silicon alloy layer and at least one passivation layer consisting of silicon or silicon alloy between at least one surface of the silicon core and the at least one n- or p-doped silicon or silicon alloy layer. In addition, the invention relates to a method for producing such a solar cell. It is the object of the present invention to provide a solar cell of the above-mentioned type which is distinguished by an increased open circuit voltage. A further object is to provide a method for producing such a solar cell. This object is achieved firstly by a solar cell of the above-mentioned type which is characterized in that the passivation layer comprises silicon monohydride molecule groups (Si-H) and silicon dihydride molecule groups (Si-H2), wherein a ratio (Q) of the number of silicon dihydride molecule groups (nSi-H2) to the total number of silicon dihydride molecule groups and silicon monohydride molecule groups (nSi-H) + (nSi-H) in a comparison volume of the passivation layer is greater than 0.4 (I). The object is further achieved by a method for producing a solar cell of the above-mentioned type which is characterized in that the passivation layer is deposited in a plurality of substeps of a plasma discharge process in such a manner that the passivation layer produced has silicon monohydride molecule groups (Si-H) and silicon dihydride molecule groups (Si-H2) and a ratio (Q) of the number of silicon dihydride molecule groups (nSi-H2) to the total number of silicon dihydride molecule groups and silicon monohydride molecule groups (nSi-H2+nsi-H) in a comparative volume of the passivation layer is greater than 0.4 (I).
| Original language | English (US) |
|---|---|
| Patent number | WO2013021298 |
| IPC | H01L 31/ 18 A I |
| Priority date | 08/8/11 |
| State | Published - Feb 14 2013 |