We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as - 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as - 110 ms (the rise time) and - 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Sep 11 2013|
Bibliographical noteFunding Information:
This work was supported by National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112-M-002-024-MY3, and 99-2120-M-007-011) and National Taiwan University (10R70823).
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