Solar-blind photodetectors for harsh electronics

Dung Sheng Tsai; Wei Cheng Lien; Der Hsien Lien; Kuan Ming Chen; Meng Lin Tsai; Debbie G. Senesky; Yueh Chung Yu; Albert P. Pisano; Jr Hau He

doi:10.1038/srep02628

Solar-blind photodetectors for harsh electronics

Dung Sheng Tsai, Wei Cheng Lien, Der Hsien Lien, Kuan Ming Chen, Meng Lin Tsai, Debbie G. Senesky, Yueh Chung Yu, Albert P. Pisano, Jr Hau He^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

106 Scopus citations

Abstract

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as - 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10¹³ cm⁻² of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as - 110 ms (the rise time) and - 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.

Original language	English (US)
Article number	2628
Pages (from-to)	1-5
Number of pages	5
Journal	Scientific Reports
Volume	4
DOIs	https://doi.org/10.1038/srep02628
State	Published - Sep 11 2013
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112-M-002-024-MY3, and 99-2120-M-007-011) and National Taiwan University (10R70823).

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@article{83ff78ace8584cec8ad8b374fd459f7b,

title = "Solar-blind photodetectors for harsh electronics",

abstract = "We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as - 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as - 110 ms (the rise time) and - 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.",

author = "Tsai, {Dung Sheng} and Lien, {Wei Cheng} and Lien, {Der Hsien} and Chen, {Kuan Ming} and Tsai, {Meng Lin} and Senesky, {Debbie G.} and Yu, {Yueh Chung} and Pisano, {Albert P.} and He, {Jr Hau}",

note = "Funding Information: This work was supported by National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112-M-002-024-MY3, and 99-2120-M-007-011) and National Taiwan University (10R70823).",

year = "2013",

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doi = "10.1038/srep02628",

language = "English (US)",

volume = "4",

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journal = "Scientific Reports",

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T1 - Solar-blind photodetectors for harsh electronics

AU - Tsai, Dung Sheng

AU - Lien, Wei Cheng

AU - Lien, Der Hsien

AU - Chen, Kuan Ming

AU - Tsai, Meng Lin

AU - Senesky, Debbie G.

AU - Yu, Yueh Chung

AU - Pisano, Albert P.

AU - He, Jr Hau

N1 - Funding Information: This work was supported by National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112-M-002-024-MY3, and 99-2120-M-007-011) and National Taiwan University (10R70823).

PY - 2013/9/11

Y1 - 2013/9/11

N2 - We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as - 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as - 110 ms (the rise time) and - 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.

AB - We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as - 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as - 110 ms (the rise time) and - 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.

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EP - 5

JO - Scientific Reports

JF - Scientific Reports

M1 - 2628

ER -

Solar-blind photodetectors for harsh electronics

Abstract

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