SnO2 sub-micron wires for gas sensors

P. Candeloro; A. Carpentiero; S. Cabrini; E. Di Fabrizio; E. Comini; C. Baratto; G. Faglia; G. Sberveglieri; A. Gerardino

doi:10.1016/j.mee.2004.12.024

SnO₂ sub-micron wires for gas sensors

P. Candeloro^*, A. Carpentiero, S. Cabrini, E. Di Fabrizio, E. Comini, C. Baratto, G. Faglia, G. Sberveglieri, A. Gerardino

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

21 Scopus citations

Abstract

In the present work a novel semiconductor metal-oxide (MOX) gas sensor is developed by means of lithographic techniques. The basic idea is to replace the continuous sensing film of standard MOX sensors with a pattern of wires in the sub-micron scale. Two approaches are followed: a plain lift-off process and a substrate patterning process. This work presents a comparison of the results of the two processes. The fabricated sensors are characterized by electrical measurements in different atmospheres and their responses are compared to with the ones of continuous film based sensors. An improvement of the performances of the patterned sensor is highlighted by the experimental data.

Original language	English (US)
Pages (from-to)	178-184
Number of pages	7
Journal	Microelectronic Engineering
Volume	78-79
Issue number	1-4
DOIs	https://doi.org/10.1016/j.mee.2004.12.024
State	Published - Mar 2005
Externally published	Yes
Event	Proceedings of the 30th International Conference on Micro- and Nano-Engineering - Duration: Sep 19 2004 → Sep 22 2004

Keywords

E-beam lithography
Gas sensors
Semiconductor metal-oxide
SiO reactive ion etching
Tin dioxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2004.12.024

Cite this

@article{082b54a9a23e473797f331aaab6e1acf,

title = "SnO2 sub-micron wires for gas sensors",

abstract = "In the present work a novel semiconductor metal-oxide (MOX) gas sensor is developed by means of lithographic techniques. The basic idea is to replace the continuous sensing film of standard MOX sensors with a pattern of wires in the sub-micron scale. Two approaches are followed: a plain lift-off process and a substrate patterning process. This work presents a comparison of the results of the two processes. The fabricated sensors are characterized by electrical measurements in different atmospheres and their responses are compared to with the ones of continuous film based sensors. An improvement of the performances of the patterned sensor is highlighted by the experimental data.",

keywords = "E-beam lithography, Gas sensors, Semiconductor metal-oxide, SiO reactive ion etching, Tin dioxide",

author = "P. Candeloro and A. Carpentiero and S. Cabrini and {Di Fabrizio}, E. and E. Comini and C. Baratto and G. Faglia and G. Sberveglieri and A. Gerardino",

year = "2005",

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doi = "10.1016/j.mee.2004.12.024",

language = "English (US)",

volume = "78-79",

pages = "178--184",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Proceedings of the 30th International Conference on Micro- and Nano-Engineering ; Conference date: 19-09-2004 Through 22-09-2004",

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T1 - SnO2 sub-micron wires for gas sensors

AU - Candeloro, P.

AU - Carpentiero, A.

AU - Cabrini, S.

AU - Di Fabrizio, E.

AU - Comini, E.

AU - Baratto, C.

AU - Faglia, G.

AU - Sberveglieri, G.

AU - Gerardino, A.

PY - 2005/3

Y1 - 2005/3

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AB - In the present work a novel semiconductor metal-oxide (MOX) gas sensor is developed by means of lithographic techniques. The basic idea is to replace the continuous sensing film of standard MOX sensors with a pattern of wires in the sub-micron scale. Two approaches are followed: a plain lift-off process and a substrate patterning process. This work presents a comparison of the results of the two processes. The fabricated sensors are characterized by electrical measurements in different atmospheres and their responses are compared to with the ones of continuous film based sensors. An improvement of the performances of the patterned sensor is highlighted by the experimental data.

KW - E-beam lithography

KW - Gas sensors

KW - Semiconductor metal-oxide

KW - SiO reactive ion etching

KW - Tin dioxide

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