SnO2 lithographic processing for nanopatterned gas sensors

P. Candeloro*, E. Comini, C. Baratto, G. Faglia, G. Sberveglieri, R. Kumar, A. Carpentiero, E. Di Fabrizio

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


Tin dioxide (Sn O2) is widely used as sensing material in metal-oxides gas sensors. In this work we present two lithographic approaches for Sn O2 patterning, an additive process and a subtractive one. In the first case patterns of Sn O2 nanowires are successfully fabricated and exploited as sensing element in working devices; responses to several testing gases are satisfactorily improved with respect to continuous film devices. Regarding the subtractive process, we present reactive ion etching of Sn O2 based on C F4 H2 gas mixture. Dependence of etch rate upon H2 concentration and effects due to Ar additions to plasma are investigated; results are discussed and a possible etching reaction is proposed, but further developments are required to increase the etch rate.

Original languageEnglish (US)
Pages (from-to)2784-2788
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
StatePublished - Nov 2005
Externally publishedYes

Bibliographical note

Funding Information:
One of the authors, P.C., gratefully acknowledges financial support from SACMI-Imola. This work was supported by the Italian Ministry of Education, University and Research through Grant No. PNR 2001-2003 FIRB 2003-2005 “Sviluppo di microsistemi multisensoriali per applicazioni ambientali e agroalimentari.”

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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