Abstract
Tin dioxide (Sn O2) is widely used as sensing material in metal-oxides gas sensors. In this work we present two lithographic approaches for Sn O2 patterning, an additive process and a subtractive one. In the first case patterns of Sn O2 nanowires are successfully fabricated and exploited as sensing element in working devices; responses to several testing gases are satisfactorily improved with respect to continuous film devices. Regarding the subtractive process, we present reactive ion etching of Sn O2 based on C F4 H2 gas mixture. Dependence of etch rate upon H2 concentration and effects due to Ar additions to plasma are investigated; results are discussed and a possible etching reaction is proposed, but further developments are required to increase the etch rate.
Original language | English (US) |
---|---|
Pages (from-to) | 2784-2788 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 23 |
Issue number | 6 |
DOIs | |
State | Published - Nov 2005 |
Externally published | Yes |
Bibliographical note
Funding Information:One of the authors, P.C., gratefully acknowledges financial support from SACMI-Imola. This work was supported by the Italian Ministry of Education, University and Research through Grant No. PNR 2001-2003 FIRB 2003-2005 “Sviluppo di microsistemi multisensoriali per applicazioni ambientali e agroalimentari.”
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering