We carried out a series of simulations analyzing the dependence of mirror reflectance, threshold current density, and differential efficiency on the scattering loss caused by the roughness of tin-doped indium oxide (ITO) intracavity contacts for 405 nm flip-chip III-nitride vertical-cavity surface-emitting lasers (VCSELs). From these results, we determined that the ITO root-mean-square (RMS) roughness should be
Bibliographical noteKAUST Repository Item: Exported on 2021-11-04
Acknowledgements: The authors would like to thank Mitsubishi Chemical Corporation for providing high-quality free-standing m-plane GaN substrates, Tony Bosch at the UCSB Nanofabrication facility for e-beam system support, Nina Hong at J. Woollam for ellipsometer modeling expertise, and Daniel F. Feezell at the University of New Mexico for general discussions on VCSELs. This work was funded in part by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program, and the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). Partial funding for this work came from Professor Boon S. Ooi at King Abdullah University of Science and Technology (KAUST), through his participation in the KACST-TIC program. A portion of this work was done in the UCSB nanofabrication facility, with support from the NSF NNIN network (ECS-03357650), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
ASJC Scopus subject areas
- General Physics and Astronomy