TY - JOUR
T1 - Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon
AU - Jahangir, Shafat
AU - Frost, Thomas
AU - Hazari, Arnab
AU - Yan, Lifan
AU - Stark, Ethan
AU - LaMountain, Trevor
AU - Millunchick, Joanna M.
AU - Ooi, Boon S.
AU - Bhattacharya, Pallab
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2015/2/16
Y1 - 2015/2/16
N2 - The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).
AB - The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).
UR - http://hdl.handle.net/10754/346751
UR - http://scitation.aip.org/content/aip/journal/apl/106/7/10.1063/1.4913317
UR - http://www.scopus.com/inward/record.url?scp=84923267000&partnerID=8YFLogxK
U2 - 10.1063/1.4913317
DO - 10.1063/1.4913317
M3 - Article
SN - 0003-6951
VL - 106
SP - 071108
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 7
ER -