Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods

Michele Ann Conroy; Haoning Li; Gunnar Kusch; Chao Zhao; Boon S. Ooi; Edwards Paul; Robert W. Martin; Justin D. Holmes; Peter Parbrook

doi:10.1039/C6NR00116E

Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods

Michele Ann Conroy, Haoning Li, Gunnar Kusch, Chao Zhao, Boon S. Ooi, Edwards Paul, Robert W. Martin, Justin D. Holmes, Peter Parbrook

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive x-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips’ broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD’s confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.

Original language	English (US)
Pages (from-to)	11019-11026
Number of pages	8
Journal	Nanoscale
Volume	8
Issue number	21
DOIs	https://doi.org/10.1039/C6NR00116E
State	Published - 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This research was enabled by the Irish Higher Education
Authority Programme for Research in Third Level Institutions
Cycles 4 and 5 via the INSPIRE and TYFFANI projects, and by
Science Foundation Ireland (SFI) under Grant no.
SFI/10/IN.1/I2993. PJP acknowledges funding from SFI
Engineering Professorship scheme (07/EN/E001A) and MC
acknowledges PhD research scholarship from INSPIRE. This
work was conducted under the framework of the Irish
Government's Programme for Research in Third Level
Institutions Cycle 5, National Development Plan 2007–2013
with the assistance of the European Regional Development
Fund. RWM and GK acknowledge funding from the Engineering
and Physical Sciences Research Council (EPSRC)
(EP/M003132/1) of the UK. We also acknowledge the support
of Duc V. Dinh for his help with the PL spectra and William Jagoe
for his illustrations in the article.

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10.1039/C6NR00116E

https://repository.kaust.edu.sa/bitstream/10754/601362/1/c6nr00116e.pdf

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@article{172b68f707c84f7daa87595e3ded375e,

title = "Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods",

abstract = "We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive x-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips{\textquoteright} broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD{\textquoteright}s confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.",

author = "Conroy, {Michele Ann} and Haoning Li and Gunnar Kusch and Chao Zhao and Ooi, {Boon S.} and Edwards Paul and Martin, {Robert W.} and Holmes, {Justin D.} and Peter Parbrook",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This research was enabled by the Irish Higher Education Authority Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects, and by Science Foundation Ireland (SFI) under Grant no. SFI/10/IN.1/I2993. PJP acknowledges funding from SFI Engineering Professorship scheme (07/EN/E001A) and MC acknowledges PhD research scholarship from INSPIRE. This work was conducted under the framework of the Irish Government's Programme for Research in Third Level Institutions Cycle 5, National Development Plan 2007–2013 with the assistance of the European Regional Development Fund. RWM and GK acknowledge funding from the Engineering and Physical Sciences Research Council (EPSRC) (EP/M003132/1) of the UK. We also acknowledge the support of Duc V. Dinh for his help with the PL spectra and William Jagoe for his illustrations in the article.",

year = "2016",

doi = "10.1039/C6NR00116E",

language = "English (US)",

volume = "8",

pages = "11019--11026",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

number = "21",

}

TY - JOUR

T1 - Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods

AU - Conroy, Michele Ann

AU - Li, Haoning

AU - Kusch, Gunnar

AU - Zhao, Chao

AU - Ooi, Boon S.

AU - Paul, Edwards

AU - Martin, Robert W.

AU - Holmes, Justin D.

AU - Parbrook, Peter

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This research was enabled by the Irish Higher Education Authority Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects, and by Science Foundation Ireland (SFI) under Grant no. SFI/10/IN.1/I2993. PJP acknowledges funding from SFI Engineering Professorship scheme (07/EN/E001A) and MC acknowledges PhD research scholarship from INSPIRE. This work was conducted under the framework of the Irish Government's Programme for Research in Third Level Institutions Cycle 5, National Development Plan 2007–2013 with the assistance of the European Regional Development Fund. RWM and GK acknowledge funding from the Engineering and Physical Sciences Research Council (EPSRC) (EP/M003132/1) of the UK. We also acknowledge the support of Duc V. Dinh for his help with the PL spectra and William Jagoe for his illustrations in the article.

PY - 2016

Y1 - 2016

N2 - We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive x-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips’ broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD’s confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.

AB - We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive x-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips’ broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD’s confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates.

UR - http://hdl.handle.net/10754/601362

UR - http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR00116E

UR - http://www.scopus.com/inward/record.url?scp=84971484576&partnerID=8YFLogxK

U2 - 10.1039/C6NR00116E

DO - 10.1039/C6NR00116E

M3 - Article

SN - 2040-3364

VL - 8

SP - 11019

EP - 11026

JO - Nanoscale

JF - Nanoscale

IS - 21

ER -

Site controlled Red-Yellow-Green light emitting InGaN Quantum Discs on nano-tipped GaN rods

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