Abstract
Single and two-stage self-injection locking in InGaN/GaN laser diode is presented. Near single-mode emission with 34pm linewidth, and simultaneous locking of four longitudinal modes with appreciable 18dB SMSR and
Original language | English (US) |
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Title of host publication | 2020 Conference on Lasers and Electro-Optics (CLEO) |
Publisher | IEEE |
ISBN (Print) | 978-1-7281-4418-4 |
State | Published - 2020 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): BAS/1/1614-01-01, GEN/1/6607-01-01, KCR/1/2081-01-01, REP/1/2878-01-01
Acknowledgements: We acknowledge the support from KFUPM, KAUST (BAS/1/1614-01-01, REP/1/2878-01-01, KCR/1/2081-01-01, and GEN/1/6607-01-01), and KACST (EE2381 and KACST TIC R2-FP-008).