Single and two-stage self-injection locking in InGaN/GaN laser diode is presented. Near single-mode emission with 34pm linewidth, and simultaneous locking of four longitudinal modes with appreciable 18dB SMSR and
|Original language||English (US)|
|Title of host publication||2020 Conference on Lasers and Electro-Optics (CLEO)|
|State||Published - 2020|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01, GEN/1/6607-01-01, KCR/1/2081-01-01, REP/1/2878-01-01
Acknowledgements: We acknowledge the support from KFUPM, KAUST (BAS/1/1614-01-01, REP/1/2878-01-01, KCR/1/2081-01-01, and GEN/1/6607-01-01), and KACST (EE2381 and KACST TIC R2-FP-008).