Abstract
Single transverse mode control is achieved for multimode GaAs-based VCSEL by utilizing photonic crystal design and etched trench structure. Theoretical analysis is initially performed for photonic crystal design with various lattice constants and air holes diameter. The fabricated photonic crystal VCSEL with etched trench structure exhibits single mode output power of 0.7 mW, threshold current of 3.5 mA, slope efficiency of 0.10 W/A, and continuous single mode output spectrum throughout a wide operating current range. Comparison of typical oxide VCSEL, trench oxide VCSEL, and photonic crystal oxide VCSEL employing trench structure is presented. By combining photonic crystal and trench structure, single transverse mode operation of photonic crystal VCSEL can be much more strictly controlled.
Original language | English (US) |
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Pages (from-to) | 38-46 |
Number of pages | 9 |
Journal | Photonics and Nanostructures - Fundamentals and Applications |
Volume | 8 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2010 |
Externally published | Yes |
Keywords
- GaAs
- Photonic crystal
- Semiconductor laser
- VCSEL
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Hardware and Architecture
- Electrical and Electronic Engineering