Single-layer MoS 2 phototransistors

Zongyou Yin; Hai Li; Hong Li; Lin Jiang; Yumeng Shi; Yinghui Sun; Gang Lu; Qing Zhang; Xiaodong Chen; Hua Zhang

doi:10.1021/nn2024557

Single-layer MoS ₂ phototransistors

Zongyou Yin, Hai Li, Hong Li, Lin Jiang, Yumeng Shi, Yinghui Sun, Gang Lu, Qing Zhang, Xiaodong Chen, Hua Zhang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3218 Scopus citations

Abstract

A new phototransistor based on the mechanically exfoliated single-layer MoS ₂ nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS ₂ phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS ₂ phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

Original language	English (US)
Pages (from-to)	74-80
Number of pages	7
Journal	ACS Nano
Volume	6
Issue number	1
DOIs	https://doi.org/10.1021/nn2024557
State	Published - Jan 24 2012
Externally published	Yes

Keywords

MoS
photocurrent
photoresponsivity
photoswitching
phototransistors
single-layer

ASJC Scopus subject areas

General Materials Science
General Engineering
General Physics and Astronomy

Access to Document

10.1021/nn2024557

Cite this

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title = "Single-layer MoS 2 phototransistors",

abstract = "A new phototransistor based on the mechanically exfoliated single-layer MoS 2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS 2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS 2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.",

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T1 - Single-layer MoS 2 phototransistors

AU - Yin, Zongyou

AU - Li, Hai

AU - Li, Hong

AU - Jiang, Lin

AU - Shi, Yumeng

AU - Sun, Yinghui

AU - Lu, Gang

AU - Zhang, Qing

AU - Chen, Xiaodong

AU - Zhang, Hua

PY - 2012/1/24

Y1 - 2012/1/24

N2 - A new phototransistor based on the mechanically exfoliated single-layer MoS 2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS 2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS 2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

AB - A new phototransistor based on the mechanically exfoliated single-layer MoS 2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS 2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS 2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

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