Abstract
A new phototransistor based on the mechanically exfoliated single-layer MoS 2 nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS 2 phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS 2 phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.
Original language | English (US) |
---|---|
Pages (from-to) | 74-80 |
Number of pages | 7 |
Journal | ACS Nano |
Volume | 6 |
Issue number | 1 |
DOIs | |
State | Published - Jan 24 2012 |
Externally published | Yes |
Keywords
- MoS
- photocurrent
- photoresponsivity
- photoswitching
- phototransistors
- single-layer
ASJC Scopus subject areas
- General Materials Science
- General Engineering
- General Physics and Astronomy