Single crystal hybrid perovskite field-effect transistors

Weili Yu, Feng Li, Liyang Yu, Muhammad Rizwan Niazi, Yuting Zou, Daniel Alejandro Corzo Diaz, Aniruddha Basu, Chun Ma, Sukumar Dey, Max Lutz Tietze, Ulrich Buttner, Xianbin Wang, Zhihong Wang, Mohamed N. Hedhili, Chunlei Guo, Tao Wu, Aram Amassian

Research output: Contribution to journalArticlepeer-review

257 Scopus citations


The fields of photovoltaics, photodetection and light emission have seen tremendous activity in recent years with the advent of hybrid organic-inorganic perovskites. Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirements of transistors make them particularly vulnerable to surface contamination and defects rife in polycrystalline films and bulk single crystals. Here, we demonstrate a spatially-confined inverse temperature crystallization strategy which synthesizes micrometre-thin single crystals of methylammonium lead halide perovskites MAPbX3 (X = Cl, Br, I) with sub-nanometer surface roughness and very low surface contamination. These benefit the integration of MAPbX3 crystals into ambipolar transistors and yield record, room-temperature field-effect mobility up to 4.7 and 1.5 cm2 V−1 s−1 in p and n channel devices respectively, with 104 to 105 on-off ratio and low turn-on voltages. This work paves the way for integrating hybrid perovskite crystals into printed, flexible and transparent electronics.
Original languageEnglish (US)
JournalNature Communications
Issue number1
StatePublished - Dec 17 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). W.Y. acknowledges the financial support from National Natural Science Foundation of China (NSFC, No. 61705227).


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