Single-crystal GaN growth and polarity control using an E-beam evaporated aluminum layer

Mun-Do Park; Jung-Wook Min; Jun-Yeob Lee; Jeong-Hwan Park; Soo-Young Choi; Dong-Seon Lee

doi:10.1364/ome.419734

Single-crystal GaN growth and polarity control using an E-beam evaporated aluminum layer

Mun-Do Park, Jung-Wook Min, Jun-Yeob Lee, Jeong-Hwan Park, Soo-Young Choi, Dong-Seon Lee

King Abdullah University of Science and Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report on a method for controlling the polarity of gallium nitride (GaN) using an E-beam evaporated aluminum (Al) layer on a sapphire substrate. A high-temperature nitridation process was designed to enable the amorphous Al layer to serve as a nucleation layer for single-crystal Ga-polar GaN growth. The Al layer also acts as a mask that prevents N-polar GaN growth. As a result, Ga-polar and N-polar GaN can be grown on the Al layer and sapphire surface, respectively. This method is not only advantageous for the selective polarity control but also to simplify the fabrication process of lateral polarity structures.

Original language	English (US)
Pages (from-to)	955
Journal	Optical Materials Express
Volume	11
Issue number	4
DOIs	https://doi.org/10.1364/ome.419734
State	Published - Mar 4 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-03-11
Acknowledgements: This research was supported in part by the GIST Research Institute (GRI) and Samsung Electronics in 2021.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1364/ome.419734

Cite this

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title = "Single-crystal GaN growth and polarity control using an E-beam evaporated aluminum layer",

abstract = "We report on a method for controlling the polarity of gallium nitride (GaN) using an E-beam evaporated aluminum (Al) layer on a sapphire substrate. A high-temperature nitridation process was designed to enable the amorphous Al layer to serve as a nucleation layer for single-crystal Ga-polar GaN growth. The Al layer also acts as a mask that prevents N-polar GaN growth. As a result, Ga-polar and N-polar GaN can be grown on the Al layer and sapphire surface, respectively. This method is not only advantageous for the selective polarity control but also to simplify the fabrication process of lateral polarity structures.",

author = "Mun-Do Park and Jung-Wook Min and Jun-Yeob Lee and Jeong-Hwan Park and Soo-Young Choi and Dong-Seon Lee",

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T1 - Single-crystal GaN growth and polarity control using an E-beam evaporated aluminum layer

AU - Park, Mun-Do

AU - Min, Jung-Wook

AU - Lee, Jun-Yeob

AU - Park, Jeong-Hwan

AU - Choi, Soo-Young

AU - Lee, Dong-Seon

N1 - KAUST Repository Item: Exported on 2021-03-11 Acknowledgements: This research was supported in part by the GIST Research Institute (GRI) and Samsung Electronics in 2021.

PY - 2021/3/4

Y1 - 2021/3/4

N2 - We report on a method for controlling the polarity of gallium nitride (GaN) using an E-beam evaporated aluminum (Al) layer on a sapphire substrate. A high-temperature nitridation process was designed to enable the amorphous Al layer to serve as a nucleation layer for single-crystal Ga-polar GaN growth. The Al layer also acts as a mask that prevents N-polar GaN growth. As a result, Ga-polar and N-polar GaN can be grown on the Al layer and sapphire surface, respectively. This method is not only advantageous for the selective polarity control but also to simplify the fabrication process of lateral polarity structures.

AB - We report on a method for controlling the polarity of gallium nitride (GaN) using an E-beam evaporated aluminum (Al) layer on a sapphire substrate. A high-temperature nitridation process was designed to enable the amorphous Al layer to serve as a nucleation layer for single-crystal Ga-polar GaN growth. The Al layer also acts as a mask that prevents N-polar GaN growth. As a result, Ga-polar and N-polar GaN can be grown on the Al layer and sapphire surface, respectively. This method is not only advantageous for the selective polarity control but also to simplify the fabrication process of lateral polarity structures.

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Single-crystal GaN growth and polarity control using an E-beam evaporated aluminum layer

Abstract

Bibliographical note

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