Single and Multiple Longitudinal Wavelength Generation in Green Diode Laser

Md Hosne Mobarok Shamim; Tien Khee Ng; Boon S. Ooi; Mohammed Zahed Mustafa Khan

doi:10.1109/jstqe.2019.2916870

Single and Multiple Longitudinal Wavelength Generation in Green Diode Laser

Md Hosne Mobarok Shamim, Tien Khee Ng, Boon S. Ooi, Mohammed Zahed Mustafa Khan

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Single and multiple wavelength laser systems are presented that employ self-injection locked InGaN/GaN green laser diodes in an external cavity configuration with a partially reflective mirror. A stable and simultaneous locking of up to four longitudinal Fabry–Perot modes of the system cavity is demonstrated with appreciable signal-to-noise-ratio of ∼13 dB and average mode linewidth of ∼150 pm. The multi-wavelength spectrum exhibited a flat-top emission with nearly equal power distribution among the modes and an analogous mode spacing of ∼0.5 nm. This first demonstration of multi-wavelength generation source is highly attractive in a multitude of cross-disciplinary field applications besides asserting the prospects of narrow wavelength spaced multiplexed visible light communication. Moreover, an extended two-stage self-injection locked near single wavelength visible laser system is also presented. An ultra-narrow linewidth of ∼34 pm is realized at 525.05 nm locked wavelength from this innovative system, with ∼20 dB side-mode-suppression-ratio; thus signifying a paradigm shift toward semiconductor lasers for near single lasing wavelength generation, which is presently dominated by other kinds of laser technologies.

Original language	English (US)
Pages (from-to)	1-7
Number of pages	7
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	25
Issue number	6
DOIs	https://doi.org/10.1109/jstqe.2019.2916870
State	Published - 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01, KCR/1/2081-01-01, GEN/1/6607-01-01, REP/1/2878-01-01
Acknowledgements: This work was supported in part by the King Abdulaziz City for Science and Technology (KACST) under Grants EE2381 and KACST TIC R2-FP-008, in part by King Abdullah University of Science and Technology (KAUST) baseline funding under Grants BAS/1/1614-01-01, KCR/1/2081-01- 01, and GEN/1/6607-01-01, and in part by KAUST-KFUPM Special Initiative (KKI) Program (REP/1/2878-01-01).

Access to Document

10.1109/jstqe.2019.2916870

https://repository.kaust.edu.sa/bitstream/10754/655515/1/JSTQE_Shamim_08715477.pdf

Cite this

@article{05a06bf80e8846f0a7a169b1c3c6bd49,

title = "Single and Multiple Longitudinal Wavelength Generation in Green Diode Laser",

abstract = "Single and multiple wavelength laser systems are presented that employ self-injection locked InGaN/GaN green laser diodes in an external cavity configuration with a partially reflective mirror. A stable and simultaneous locking of up to four longitudinal Fabry–Perot modes of the system cavity is demonstrated with appreciable signal-to-noise-ratio of ∼13 dB and average mode linewidth of ∼150 pm. The multi-wavelength spectrum exhibited a flat-top emission with nearly equal power distribution among the modes and an analogous mode spacing of ∼0.5 nm. This first demonstration of multi-wavelength generation source is highly attractive in a multitude of cross-disciplinary field applications besides asserting the prospects of narrow wavelength spaced multiplexed visible light communication. Moreover, an extended two-stage self-injection locked near single wavelength visible laser system is also presented. An ultra-narrow linewidth of ∼34 pm is realized at 525.05 nm locked wavelength from this innovative system, with ∼20 dB side-mode-suppression-ratio; thus signifying a paradigm shift toward semiconductor lasers for near single lasing wavelength generation, which is presently dominated by other kinds of laser technologies.",

author = "Shamim, {Md Hosne Mobarok} and Ng, {Tien Khee} and Ooi, {Boon S.} and Khan, {Mohammed Zahed Mustafa}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01, KCR/1/2081-01-01, GEN/1/6607-01-01, REP/1/2878-01-01 Acknowledgements: This work was supported in part by the King Abdulaziz City for Science and Technology (KACST) under Grants EE2381 and KACST TIC R2-FP-008, in part by King Abdullah University of Science and Technology (KAUST) baseline funding under Grants BAS/1/1614-01-01, KCR/1/2081-01- 01, and GEN/1/6607-01-01, and in part by KAUST-KFUPM Special Initiative (KKI) Program (REP/1/2878-01-01).",

year = "2019",

doi = "10.1109/jstqe.2019.2916870",

language = "English (US)",

volume = "25",

pages = "1--7",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Single and Multiple Longitudinal Wavelength Generation in Green Diode Laser

AU - Shamim, Md Hosne Mobarok

AU - Ng, Tien Khee

AU - Ooi, Boon S.

AU - Khan, Mohammed Zahed Mustafa

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01, KCR/1/2081-01-01, GEN/1/6607-01-01, REP/1/2878-01-01 Acknowledgements: This work was supported in part by the King Abdulaziz City for Science and Technology (KACST) under Grants EE2381 and KACST TIC R2-FP-008, in part by King Abdullah University of Science and Technology (KAUST) baseline funding under Grants BAS/1/1614-01-01, KCR/1/2081-01- 01, and GEN/1/6607-01-01, and in part by KAUST-KFUPM Special Initiative (KKI) Program (REP/1/2878-01-01).

PY - 2019

Y1 - 2019

N2 - Single and multiple wavelength laser systems are presented that employ self-injection locked InGaN/GaN green laser diodes in an external cavity configuration with a partially reflective mirror. A stable and simultaneous locking of up to four longitudinal Fabry–Perot modes of the system cavity is demonstrated with appreciable signal-to-noise-ratio of ∼13 dB and average mode linewidth of ∼150 pm. The multi-wavelength spectrum exhibited a flat-top emission with nearly equal power distribution among the modes and an analogous mode spacing of ∼0.5 nm. This first demonstration of multi-wavelength generation source is highly attractive in a multitude of cross-disciplinary field applications besides asserting the prospects of narrow wavelength spaced multiplexed visible light communication. Moreover, an extended two-stage self-injection locked near single wavelength visible laser system is also presented. An ultra-narrow linewidth of ∼34 pm is realized at 525.05 nm locked wavelength from this innovative system, with ∼20 dB side-mode-suppression-ratio; thus signifying a paradigm shift toward semiconductor lasers for near single lasing wavelength generation, which is presently dominated by other kinds of laser technologies.

AB - Single and multiple wavelength laser systems are presented that employ self-injection locked InGaN/GaN green laser diodes in an external cavity configuration with a partially reflective mirror. A stable and simultaneous locking of up to four longitudinal Fabry–Perot modes of the system cavity is demonstrated with appreciable signal-to-noise-ratio of ∼13 dB and average mode linewidth of ∼150 pm. The multi-wavelength spectrum exhibited a flat-top emission with nearly equal power distribution among the modes and an analogous mode spacing of ∼0.5 nm. This first demonstration of multi-wavelength generation source is highly attractive in a multitude of cross-disciplinary field applications besides asserting the prospects of narrow wavelength spaced multiplexed visible light communication. Moreover, an extended two-stage self-injection locked near single wavelength visible laser system is also presented. An ultra-narrow linewidth of ∼34 pm is realized at 525.05 nm locked wavelength from this innovative system, with ∼20 dB side-mode-suppression-ratio; thus signifying a paradigm shift toward semiconductor lasers for near single lasing wavelength generation, which is presently dominated by other kinds of laser technologies.

UR - http://hdl.handle.net/10754/655515

UR - https://ieeexplore.ieee.org/document/8715477

UR - http://www.scopus.com/inward/record.url?scp=85067248588&partnerID=8YFLogxK

U2 - 10.1109/jstqe.2019.2916870

DO - 10.1109/jstqe.2019.2916870

M3 - Article

SN - 1077-260X

VL - 25

SP - 1

EP - 7

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

IS - 6

ER -

Single and Multiple Longitudinal Wavelength Generation in Green Diode Laser

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this