Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm

Mohammed Zahed Mustafa Khan; Dong Kyu Cha; Mohammed Abdul Majid; Tien Khee Ng; Boon S. Ooi

doi:10.1364/OL.38.003720

Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm

Mohammed Zahed Mustafa Khan, Dong Kyu Cha, Mohammed Abdul Majid, Tien Khee Ng, Boon S. Ooi

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Abstract

We report on the quantitative evidence of simultaneous amplified spontaneous emission from the AlGaInAs/InAs/ InP-based quantum-well (Qwell) and quantum-dashes (Qdash) in a multistack dash-in-an-asymmetric-well superluminescent diode heterostructure. As a result, an emission bandwidth (full width at half-maximum) of 700 nm is achieved, covering entire O-E-S-C-L-U communication bands, and a maximum continuous wave output power of 1.3 mW, from this device structure. This demonstration paves a way to bridge entire telecommunication bands through proper optimization of device gain region, bringing significant advances and impact to a variety of cross-disciplinary field applications. © 2013 Optical Society of America.

Original language	English (US)
Pages (from-to)	3720
Journal	Optics Letters
Volume	38
Issue number	19
DOIs	https://doi.org/10.1364/OL.38.003720
State	Published - Sep 17 2013

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10.1364/OL.38.003720

https://repository.kaust.edu.sa/bitstream/10754/312253/1/ol-38-19-3720.pdf

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@article{36847dbd34774504b80c52a98ea597f9,

title = "Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm",

abstract = "We report on the quantitative evidence of simultaneous amplified spontaneous emission from the AlGaInAs/InAs/ InP-based quantum-well (Qwell) and quantum-dashes (Qdash) in a multistack dash-in-an-asymmetric-well superluminescent diode heterostructure. As a result, an emission bandwidth (full width at half-maximum) of 700 nm is achieved, covering entire O-E-S-C-L-U communication bands, and a maximum continuous wave output power of 1.3 mW, from this device structure. This demonstration paves a way to bridge entire telecommunication bands through proper optimization of device gain region, bringing significant advances and impact to a variety of cross-disciplinary field applications. {\textcopyright} 2013 Optical Society of America.",

author = "Khan, {Mohammed Zahed Mustafa} and Cha, {Dong Kyu} and Majid, {Mohammed Abdul} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2013",

month = sep,

day = "17",

doi = "10.1364/OL.38.003720",

language = "English (US)",

volume = "38",

pages = "3720",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "Optical Society of America",

number = "19",

}

TY - JOUR

T1 - Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm

AU - Khan, Mohammed Zahed Mustafa

AU - Cha, Dong Kyu

AU - Majid, Mohammed Abdul

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2013/9/17

Y1 - 2013/9/17

N2 - We report on the quantitative evidence of simultaneous amplified spontaneous emission from the AlGaInAs/InAs/ InP-based quantum-well (Qwell) and quantum-dashes (Qdash) in a multistack dash-in-an-asymmetric-well superluminescent diode heterostructure. As a result, an emission bandwidth (full width at half-maximum) of 700 nm is achieved, covering entire O-E-S-C-L-U communication bands, and a maximum continuous wave output power of 1.3 mW, from this device structure. This demonstration paves a way to bridge entire telecommunication bands through proper optimization of device gain region, bringing significant advances and impact to a variety of cross-disciplinary field applications. © 2013 Optical Society of America.

AB - We report on the quantitative evidence of simultaneous amplified spontaneous emission from the AlGaInAs/InAs/ InP-based quantum-well (Qwell) and quantum-dashes (Qdash) in a multistack dash-in-an-asymmetric-well superluminescent diode heterostructure. As a result, an emission bandwidth (full width at half-maximum) of 700 nm is achieved, covering entire O-E-S-C-L-U communication bands, and a maximum continuous wave output power of 1.3 mW, from this device structure. This demonstration paves a way to bridge entire telecommunication bands through proper optimization of device gain region, bringing significant advances and impact to a variety of cross-disciplinary field applications. © 2013 Optical Society of America.

UR - http://hdl.handle.net/10754/312253

UR - http://www.opticsinfobase.org/abstract.cfm?URI=ol-38-19-3720

UR - http://www.scopus.com/inward/record.url?scp=84885039388&partnerID=8YFLogxK

U2 - 10.1364/OL.38.003720

DO - 10.1364/OL.38.003720

M3 - Article

SN - 0146-9592

VL - 38

SP - 3720

JO - Optics Letters

JF - Optics Letters

IS - 19

ER -

Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth >700 nm

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