Simulation study of a 3-D device integrating FinFET and UTBFET

Hossain M. Fahad, Chenming Hu, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node.
Original languageEnglish (US)
Pages (from-to)83-87
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number1
StatePublished - Jan 2015

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the Office of Competitive Research Funds through the King Abdullah University of Science and Technology, Thuwal, Saudi Arabia, under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor D. Esseni.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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