Abstract
By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node.
Original language | English (US) |
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Pages (from-to) | 83-87 |
Number of pages | 5 |
Journal | IEEE Transactions on Electron Devices |
Volume | 62 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2015 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: This work was supported by the Office of Competitive Research Funds through the King Abdullah University of Science and Technology, Thuwal, Saudi Arabia, under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor D. Esseni.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering