By integrating 3-D nonplanar fins and 2-D ultrathin bodies, wavy FinFETs merge two formerly competing technologies on a silicon-on-insulator platform to deliver enhanced transistor performance compared with conventional trigate FinFETs with unprecedented levels of chip-area efficiency. This makes it suitable for ultralarge-scale integration high-performance logic at and beyond the 10-nm technology node.
|Original language||English (US)|
|Number of pages||5|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - Jan 2015|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the Office of Competitive Research Funds through the King Abdullah University of Science and Technology, Thuwal, Saudi Arabia, under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor D. Esseni.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering