Simulation of Si:P spin-based quantum computer architecture

Yia-Chung Chang, Angbo Fang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We present realistic simulation for single and double phosphorous donors in a silicon-based quantum computer design by solving a valley-orbit coupled effective-mass equation for describing phosphorous donors in strained silicon quantum well (QW). Using a generalized unrestricted Hartree-Fock method, we solve the two-electron effective-mass equation with quantum well confinement and realistic gate potentials. The effects of QW width, gate voltages, donor separation, and donor position shift on the lowest singlet and triplet energies and their charge distributions for a neighboring donor pair in the quantum computer(QC) architecture are analyzed. The gate tunability are defined and evaluated for a typical QC design. Estimates are obtained for the duration of spin half-swap gate operation.
Original languageEnglish (US)
Title of host publicationAIP Conference Proceedings
Number of pages43
ISBN (Print)9780735406056
StatePublished - 2008
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2021-08-19
Acknowledgements: Angbo Fang is supported by KAUST research fellowship.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


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