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Simulation of Nitride Semiconductor MOVPE
Kazuhiro Ohkawa
Computer, Electrical and Mathematical Sciences and Engineering
Electrical and Computer Engineering
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Keyphrases
Metal Organic Vapor Phase Epitaxy (MOVPE)
100%
Nitride Semiconductors
100%
Numerical Analysis
25%
Metal-organic Compounds
25%
Ammonia
25%
Semiconductor Layer
25%
Indium Gallium Nitride (InGaN)
25%
Gas Phase
25%
Aluminum Gallium Nitride (AlGaN)
25%
Growth Response
25%
Growth Rate
25%
Alloy Composition
25%
Reaction Pathway
25%
Growth Mechanism
25%
MOVPE Growth
25%
Reactive Compounds
25%
Polymer Formation
25%
Material Science
Nitride Semiconductor
100%
Aluminum Nitride
33%
Vapor Phase Epitaxy
33%