Simulation of leakage current in Si/Ge/Si quantum dot floating gate MOSFET using high-K material as tunnel oxide

Adha Sukma Aji*, Mohamad Insan Nugraha, Yudhistira, Fitria Rahayu, Yudi Darma

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Leakage current in nano-scale MOSFET has been calculated using variety of tunnel oxides. Firstly, this paper evaluates the leakage current in MOSFET devices when using SiO2 as tunnel oxide. When the thickness of tunnel oxide decreases into 1,4 nm, the leakage current will raise and cause power dissipation about 40 percent. Leakage current can be reduced by using high-K materials as tunnel oxides. Thicker high-K materials as tunnel oxides are easier to fabricate than SiO2 tunnel oxides with the thickness down to 1,4 nm. In term of Equivalent Oxide Thickness (EOT), using high-K materials for tunnel oxides could give the better performance as 1,4nm SiO2 which is also more simple in the fabrication. Here, we also evaluates the leakage current as the function of temperature, channel length, and oxide thickness. Computational result shows that using HfO2 to replace SiO2 as tunnel oxides can make leakage current decrease up to seven times. For practically use, HfO2 were suiTable as tunnel oxide in memory devices, particularly in quantum dot (QD) floating gate memory. In this case we use heterostructure QD consisting Si/Ge/Si as electronic storage node. The results demonstrated that the memory operation using HfO2 as tunnel oxide has a better performance rather than SiO2.

Original languageEnglish (US)
Title of host publication4th Nanoscience and Nanotechnology Symposium, NNS 2011 - An International Symposium
Pages196-199
Number of pages4
DOIs
StatePublished - 2011
Event4th Nanoscience and Nanotechnology Symposium, NNS 2011 - Bali, Indonesia
Duration: Sep 23 2011Sep 25 2011

Publication series

NameAIP Conference Proceedings
Volume1415
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference4th Nanoscience and Nanotechnology Symposium, NNS 2011
Country/TerritoryIndonesia
CityBali
Period09/23/1109/25/11

Keywords

  • high-K dielectric
  • leakage current
  • memory devices
  • MOSFET

ASJC Scopus subject areas

  • General Physics and Astronomy

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