Abstract
We present theoretical analysis via simulations on high power GaInNAs-GaNAs quantum-well (QW) broad area laser diode operated in the 1.204-1.242 1m wavelength regime.The structure is based on previous other group experimental work.Simulation design is based on 2D cross section which is treated as perpendicular to the optical axis and lasing direction.We strongly believed that the increased number of quantum wells has leading effects on the increment of the optical confinement factor (OCF) as compared to increment of nitrogen doping.A maximum total power output of more than 4.5W and lasing spectrum around 1242nm is obtained for the proposed structure.The device shows potential application to be used as pumping source for Raman amplifiers.
| Original language | English (US) |
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| Title of host publication | PIERS 2012 Kuala Lumpur - Progress in Electromagnetics Research Symposium, Proceedings |
| Pages | 1075-1079 |
| Number of pages | 5 |
| State | Published - 2012 |
| Externally published | Yes |
| Event | Progress in Electromagnetics Research Symposium, PIERS 2012 Kuala Lumpur - Kuala Lumpur, Malaysia Duration: Mar 27 2012 → Mar 30 2012 |
Other
| Other | Progress in Electromagnetics Research Symposium, PIERS 2012 Kuala Lumpur |
|---|---|
| Country/Territory | Malaysia |
| City | Kuala Lumpur |
| Period | 03/27/12 → 03/30/12 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials