Simulation of chemically amplified resist processes for 150 nm e-beam lithography

A. Rosenbusch*, Z. Cui, E. DiFabrizio, M. Gentili, N. Glezos, G. Meneghini, B. Nowotny, G. Patsis, P. Prewett, I. Raptis

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations


A fast simulator for e-beam lithography called SELID, is presented. For the exposure part, an analytical solution based on the Boltzmann transport equation is used instead of Monte Carlo. All-important phenomena (backscattering, generation of secondary electrons) are included in the calculation. The reaction/diffusion effects occurring during post exposure bake in the case of chemically amplified resists (CARs) are taken into account. The results obtained by the simulation are compared successfully with experimental ones for conventional and CARs. The case of substrates consisting of more than one layer is considered in depth as being of great importance in e-beam pattering. By using SELID, forecast of resist profile with considerable accuracy for a wide range of resists, substrates and energies is possible as long as the evaluation of proximity effect parameters.

Original languageEnglish (US)
Pages (from-to)379-382
Number of pages4
JournalMicroelectronic Engineering
Issue number1
StatePublished - May 1999
Externally publishedYes
EventProceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven
Duration: Sep 22 1998Sep 24 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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