Simulation of characteristics of broadband quantum dot lasers

C. L. Tan; Y. Wang; H. S. Djie; Boon Ooi

doi:10.1007/s11082-008-9225-6

Simulation of characteristics of broadband quantum dot lasers

C. L. Tan, Y. Wang, H. S. Djie, Boon Ooi

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Authors theoretically present the characterization of the multiple states broadband InGaAs/GaAs quantum-dot lasers that agrees well with the measured data. Based on the derived model, this new class of semiconductor laser is further characterized theoretically to gain an idea of the derivative characteristic such as linewidth enhancement factor in providing a picture of the competency of this novel device for diverse applications.

Original language	English (US)
Pages (from-to)	391-395
Number of pages	5
Journal	Optical and Quantum Electronics
Volume	40
Issue number	5-6
DOIs	https://doi.org/10.1007/s11082-008-9225-6
State	Published - Apr 1 2008

Keywords

Linewidth enhancement factor
Quantum dot laser
Ultra-broad lasing emission

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1007/s11082-008-9225-6

Cite this

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title = "Simulation of characteristics of broadband quantum dot lasers",

abstract = "Authors theoretically present the characterization of the multiple states broadband InGaAs/GaAs quantum-dot lasers that agrees well with the measured data. Based on the derived model, this new class of semiconductor laser is further characterized theoretically to gain an idea of the derivative characteristic such as linewidth enhancement factor in providing a picture of the competency of this novel device for diverse applications.",

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author = "Tan, {C. L.} and Y. Wang and Djie, {H. S.} and Boon Ooi",

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AU - Tan, C. L.

AU - Wang, Y.

AU - Djie, H. S.

AU - Ooi, Boon

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Y1 - 2008/4/1

N2 - Authors theoretically present the characterization of the multiple states broadband InGaAs/GaAs quantum-dot lasers that agrees well with the measured data. Based on the derived model, this new class of semiconductor laser is further characterized theoretically to gain an idea of the derivative characteristic such as linewidth enhancement factor in providing a picture of the competency of this novel device for diverse applications.

AB - Authors theoretically present the characterization of the multiple states broadband InGaAs/GaAs quantum-dot lasers that agrees well with the measured data. Based on the derived model, this new class of semiconductor laser is further characterized theoretically to gain an idea of the derivative characteristic such as linewidth enhancement factor in providing a picture of the competency of this novel device for diverse applications.

KW - Linewidth enhancement factor

KW - Quantum dot laser

KW - Ultra-broad lasing emission

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Simulation of characteristics of broadband quantum dot lasers

Abstract

Keywords

ASJC Scopus subject areas

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