Simulation of carbon nanotube based p-n junction diodes

Jingqi Li; Qing Zhang; Mary B. Chan-Park

doi:10.1016/j.carbon.2006.04.041

Simulation of carbon nanotube based p-n junction diodes

Jingqi Li, Qing Zhang^*, Mary B. Chan-Park

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Taking advantage of the unique characteristics of an ambipolar carbon nanotube field effect transistor (CNTFET), a 'p-n junction' is simulated along the single-walled carbon nanotube channel using two separate gates close to the source and drain of the CNTFET, respectively. The current-voltage characteristics of the double-gated CNTFET are calculated using a semiclassical method based on the Schottky barrier field effect transistor mechanism. The calculation results show a good rectification performance of the p-n junction.

Original language	English (US)
Pages (from-to)	3087-3090
Number of pages	4
Journal	Carbon
Volume	44
Issue number	14
DOIs	https://doi.org/10.1016/j.carbon.2006.04.041
State	Published - Nov 2006
Externally published	Yes

Keywords

Carbon nanotubes
Electrical (electronic) properties

ASJC Scopus subject areas

General Chemistry
General Materials Science

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10.1016/j.carbon.2006.04.041

Cite this

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title = "Simulation of carbon nanotube based p-n junction diodes",

abstract = "Taking advantage of the unique characteristics of an ambipolar carbon nanotube field effect transistor (CNTFET), a 'p-n junction' is simulated along the single-walled carbon nanotube channel using two separate gates close to the source and drain of the CNTFET, respectively. The current-voltage characteristics of the double-gated CNTFET are calculated using a semiclassical method based on the Schottky barrier field effect transistor mechanism. The calculation results show a good rectification performance of the p-n junction.",

keywords = "Carbon nanotubes, Electrical (electronic) properties",

author = "Jingqi Li and Qing Zhang and Chan-Park, {Mary B.}",

year = "2006",

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doi = "10.1016/j.carbon.2006.04.041",

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journal = "Carbon",

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T1 - Simulation of carbon nanotube based p-n junction diodes

AU - Li, Jingqi

AU - Zhang, Qing

AU - Chan-Park, Mary B.

PY - 2006/11

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N2 - Taking advantage of the unique characteristics of an ambipolar carbon nanotube field effect transistor (CNTFET), a 'p-n junction' is simulated along the single-walled carbon nanotube channel using two separate gates close to the source and drain of the CNTFET, respectively. The current-voltage characteristics of the double-gated CNTFET are calculated using a semiclassical method based on the Schottky barrier field effect transistor mechanism. The calculation results show a good rectification performance of the p-n junction.

AB - Taking advantage of the unique characteristics of an ambipolar carbon nanotube field effect transistor (CNTFET), a 'p-n junction' is simulated along the single-walled carbon nanotube channel using two separate gates close to the source and drain of the CNTFET, respectively. The current-voltage characteristics of the double-gated CNTFET are calculated using a semiclassical method based on the Schottky barrier field effect transistor mechanism. The calculation results show a good rectification performance of the p-n junction.

KW - Carbon nanotubes

KW - Electrical (electronic) properties

UR - http://www.scopus.com/inward/record.url?scp=33748789874&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2006.04.041

DO - 10.1016/j.carbon.2006.04.041

M3 - Article

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SN - 0008-6223

VL - 44

SP - 3087

EP - 3090

JO - Carbon

JF - Carbon

IS - 14

ER -

Simulation of carbon nanotube based p-n junction diodes

Abstract

Keywords

ASJC Scopus subject areas

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