Simulation of carbon nanotube based p-n junction diodes

Jingqi Li, Qing Zhang*, Mary B. Chan-Park

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    18 Scopus citations


    Taking advantage of the unique characteristics of an ambipolar carbon nanotube field effect transistor (CNTFET), a 'p-n junction' is simulated along the single-walled carbon nanotube channel using two separate gates close to the source and drain of the CNTFET, respectively. The current-voltage characteristics of the double-gated CNTFET are calculated using a semiclassical method based on the Schottky barrier field effect transistor mechanism. The calculation results show a good rectification performance of the p-n junction.

    Original languageEnglish (US)
    Pages (from-to)3087-3090
    Number of pages4
    Issue number14
    StatePublished - Nov 1 2006


    • Carbon nanotubes
    • Electrical (electronic) properties

    ASJC Scopus subject areas

    • General Chemistry
    • General Materials Science


    Dive into the research topics of 'Simulation of carbon nanotube based p-n junction diodes'. Together they form a unique fingerprint.

    Cite this