Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell

Peiting Zheng; Fiacre E. Rougieux; Chris Samundsett; Xinbo Yang; Yimao Wan; Julien Degoulange; Roland Einhaus; Pascal Rivat; Daniel MacDonald

doi:10.1016/j.egypro.2016.07.124

Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell

Peiting Zheng, Fiacre E. Rougieux, Chris Samundsett, Xinbo Yang, Yimao Wan, Julien Degoulange, Roland Einhaus, Pascal Rivat, Daniel MacDonald

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

In this paper, we present the 3D simulation of>20% efficiency solar cells using n-type 100% Upgraded-Metallurgical Grade (UMG) Czochralski (CZ) silicon and Electronic Grade (EG) Float Zone (FZ) fabricated using the same process. The cells have a passivated emitter rear locally diffused (PERL) structure, with an etch-back approach on the rear to maintain high bulk lifetime in the cells via phosphorus gettering. Simulation ofthe power losses of both devices are analysed as a function of measured material and cell parameters, including minority carrier lifetime, reflectance, contact resistivity and recombination parameters of the diffused and non-diffused surfaces.

Original language	English (US)
Pages (from-to)	434-442
Number of pages	9
Journal	Energy Procedia
Volume	92
DOIs	https://doi.org/10.1016/j.egypro.2016.07.124
State	Published - Aug 1 2016
Externally published	Yes
Event	6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016 - Chambery, France Duration: Mar 7 2016 → Mar 9 2016

Keywords

compensation
modelling and simulation
silicon
solar cell
upgraded metallurgical grade

ASJC Scopus subject areas

General Energy

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10.1016/j.egypro.2016.07.124

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title = "Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell",

abstract = "In this paper, we present the 3D simulation of>20% efficiency solar cells using n-type 100% Upgraded-Metallurgical Grade (UMG) Czochralski (CZ) silicon and Electronic Grade (EG) Float Zone (FZ) fabricated using the same process. The cells have a passivated emitter rear locally diffused (PERL) structure, with an etch-back approach on the rear to maintain high bulk lifetime in the cells via phosphorus gettering. Simulation ofthe power losses of both devices are analysed as a function of measured material and cell parameters, including minority carrier lifetime, reflectance, contact resistivity and recombination parameters of the diffused and non-diffused surfaces.",

keywords = "compensation, modelling and simulation, silicon, solar cell, upgraded metallurgical grade",

author = "Peiting Zheng and Rougieux, {Fiacre E.} and Chris Samundsett and Xinbo Yang and Yimao Wan and Julien Degoulange and Roland Einhaus and Pascal Rivat and Daniel MacDonald",

year = "2016",

month = aug,

day = "1",

doi = "10.1016/j.egypro.2016.07.124",

language = "English (US)",

volume = "92",

pages = "434--442",

journal = "Energy Procedia",

issn = "1876-6102",

publisher = "Elsevier Ltd",

note = "6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016 ; Conference date: 07-03-2016 Through 09-03-2016",

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T1 - Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell

AU - Zheng, Peiting

AU - Rougieux, Fiacre E.

AU - Samundsett, Chris

AU - Yang, Xinbo

AU - Wan, Yimao

AU - Degoulange, Julien

AU - Einhaus, Roland

AU - Rivat, Pascal

AU - MacDonald, Daniel

PY - 2016/8/1

Y1 - 2016/8/1

N2 - In this paper, we present the 3D simulation of>20% efficiency solar cells using n-type 100% Upgraded-Metallurgical Grade (UMG) Czochralski (CZ) silicon and Electronic Grade (EG) Float Zone (FZ) fabricated using the same process. The cells have a passivated emitter rear locally diffused (PERL) structure, with an etch-back approach on the rear to maintain high bulk lifetime in the cells via phosphorus gettering. Simulation ofthe power losses of both devices are analysed as a function of measured material and cell parameters, including minority carrier lifetime, reflectance, contact resistivity and recombination parameters of the diffused and non-diffused surfaces.

AB - In this paper, we present the 3D simulation of>20% efficiency solar cells using n-type 100% Upgraded-Metallurgical Grade (UMG) Czochralski (CZ) silicon and Electronic Grade (EG) Float Zone (FZ) fabricated using the same process. The cells have a passivated emitter rear locally diffused (PERL) structure, with an etch-back approach on the rear to maintain high bulk lifetime in the cells via phosphorus gettering. Simulation ofthe power losses of both devices are analysed as a function of measured material and cell parameters, including minority carrier lifetime, reflectance, contact resistivity and recombination parameters of the diffused and non-diffused surfaces.

KW - compensation

KW - modelling and simulation

KW - silicon

KW - solar cell

KW - upgraded metallurgical grade

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U2 - 10.1016/j.egypro.2016.07.124

DO - 10.1016/j.egypro.2016.07.124

M3 - Conference article

AN - SCOPUS:85014450933

SN - 1876-6102

VL - 92

SP - 434

EP - 442

JO - Energy Procedia

JF - Energy Procedia

T2 - 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016

Y2 - 7 March 2016 through 9 March 2016

ER -

Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell

Abstract

Keywords

ASJC Scopus subject areas

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