@inproceedings{727a7934943c4e7487ed8a6da09f2791,
title = "Simplified manufacturable band edge metal gate solution for NMOS without a capping layer",
abstract = "We describe an NMOS band edge solution that uses a metal gate doped with Lanthanide elements to achieve work functions as low as 4.05eV The capping interlayers used in previous works are no longer necessary, and metal gate implementation became much simpler. Using this electrode, low Vth value and high mobility suitable for high performance devices are achieved at a practical EOT 0f 8{\AA}.",
author = "Harris, {H. R.} and H. Alshareef and Wen, {H. C.} and S. Krishnan and K. Choi and H. Luan and D. Heh and Park, {C. S.} and Park, {H. B.} and M. Hussain and Ju, {B. S.} and Kirsch, {P. D.} and Song, {S. C.} and P. Majhi and Lee, {B. H.} and R. Jammy",
year = "2006",
doi = "10.1109/IEDM.2006.346863",
language = "English (US)",
isbn = "1424404398",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",
note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",
}