Siloxane-Terminated Solubilizing Side Chains: Bringing Conjugated Polymer Backbones Closer and Boosting Hole Mobilities in Thin-Film Transistors

Jianguo Mei, Do Hwan Kim, Alexander L. Ayzner, Michael F. Toney, Zhenan Bao

Research output: Contribution to journalArticlepeer-review

637 Scopus citations

Abstract

We introduce a novel siloxane-terminated solubilizing group and demonstrate its effectiveness as a side chain in an isoindigo-based conjugated polymer. An average hole mobility of 2.00 cm 2 V -1 s -1 (with a maximum mobility of 2.48 cm 2 V -1 s -1), was obtained from solution-processed thin-film transistors, one of the highest mobilities reported to date. In contrast, the reference polymer with a branched alkyl side chain gave an average hole mobility of 0.30 cm 2 V -1 s -1 and a maximum mobility of 0.57 cm 2 V -1 s -1. This is largely explained by the polymer packing: our new polymer exhibited a π-π stacking distance of 3.58 Å, while the reference polymer showed a distance of 3.76 Å. © 2011 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)20130-20133
Number of pages4
JournalJournal of the American Chemical Society
Volume133
Issue number50
DOIs
StatePublished - Dec 21 2011
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-C1-015-21
Acknowledgements: This work was partially supported by the Center for Advanced Molecular Photovoltaics, award no. KUS-C1-015-21, made by King Abdullah University of Science and Technology. We also acknowledge support from the Global Climate and Energy Program at Stanford. GIXD measurements were carried out at the Stanford Synchrotron Radiation Laboratory, a national user facility operated by Stanford University on behalf of the U.S. Department of Energy, Office of Basic Energy Sciences. J.M. thanks the Camille and Henry Dreyfus Postdoctoral Program in Environmental Chemistry for a postdoctoral fellowship.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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