Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.
|Original language||English (US)|
|Title of host publication||2010 35th IEEE Photovoltaic Specialists Conference|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||5|
|State||Published - Jun 2010|
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We would like to thank Whitney Gaynor forpreparing the pressed silver nanowire film. The GlobalClimate and Energy Project (GCEP) at Stanford Universityand the Center for Advanced Molecular Photovoltaicssponsored by King Abdullah University of Science andTechnology provided the funding for this project.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.