Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiOx Films

N. Daldosso*, G. Das, G. Dalba, S. Larcheri, R. Grisenti, G. Mariotto, L. Pavesi, F. Rocca, F. Priolo, G. Franzò, A. Irrera, M. Miritello, D. Pacifici, F. Iacona

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


Si nanocrystals (Si-nc) embedded in amorphous silica matrix have been obtained by thermal annealing of substoichiometric SiOx films, deposited by PECVD (plasma enhanced chemical vapour deposition) technique with different amount of Si concentrations (42 and 46 at.%). Both nucleation and evolution of Si-nc together with the changes of the amorphous matrix have been studied as a function of the annealing temperature. The comparison of x-ray absorption measurements in Total Electron Yield (TEY) mode at the Si k-edge with photoluminescence (PL), FTIR and Raman spectra, allowed clarifying the processes of Si-nc formation and structural evolution as a function of the annealing temperature and Si content.

Original languageEnglish (US)
Pages (from-to)45-50
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2003
Externally publishedYes
EventOptoelectronics of Group-IV-Based Materials - San Francisco, CA, United States
Duration: Apr 21 2003Apr 24 2003

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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