Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiOx Films

N. Daldosso; G. Das; G. Dalba; S. Larcheri; R. Grisenti; G. Mariotto; L. Pavesi; F. Rocca; F. Priolo; G. Franzò; A. Irrera; M. Miritello; D. Pacifici; F. Iacona

doi:10.1557/proc-770-i1.3

Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiO_x Films

N. Daldosso^*, G. Das, G. Dalba, S. Larcheri, R. Grisenti, G. Mariotto, L. Pavesi, F. Rocca, F. Priolo, G. Franzò, A. Irrera, M. Miritello, D. Pacifici, F. Iacona

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Si nanocrystals (Si-nc) embedded in amorphous silica matrix have been obtained by thermal annealing of substoichiometric SiO_x films, deposited by PECVD (plasma enhanced chemical vapour deposition) technique with different amount of Si concentrations (42 and 46 at.%). Both nucleation and evolution of Si-nc together with the changes of the amorphous matrix have been studied as a function of the annealing temperature. The comparison of x-ray absorption measurements in Total Electron Yield (TEY) mode at the Si k-edge with photoluminescence (PL), FTIR and Raman spectra, allowed clarifying the processes of Si-nc formation and structural evolution as a function of the annealing temperature and Si content.

Original language	English (US)
Pages (from-to)	45-50
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	770
DOIs	https://doi.org/10.1557/proc-770-i1.3
State	Published - 2003
Externally published	Yes
Event	Optoelectronics of Group-IV-Based Materials - San Francisco, CA, United States Duration: Apr 21 2003 → Apr 24 2003

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Daldosso, N., Das, G., Dalba, G., Larcheri, S., Grisenti, R., Mariotto, G., Pavesi, L., Rocca, F., Priolo, F., Franzò, G., Irrera, A., Miritello, M., Pacifici, D., & Iacona, F. (2003). Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiO_x Films. Materials Research Society Symposium - Proceedings, 770, 45-50. https://doi.org/10.1557/proc-770-i1.3

@article{239b67ca1f3746298190ab0f80b21ccb,

title = "Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiOx Films",

abstract = "Si nanocrystals (Si-nc) embedded in amorphous silica matrix have been obtained by thermal annealing of substoichiometric SiOx films, deposited by PECVD (plasma enhanced chemical vapour deposition) technique with different amount of Si concentrations (42 and 46 at.%). Both nucleation and evolution of Si-nc together with the changes of the amorphous matrix have been studied as a function of the annealing temperature. The comparison of x-ray absorption measurements in Total Electron Yield (TEY) mode at the Si k-edge with photoluminescence (PL), FTIR and Raman spectra, allowed clarifying the processes of Si-nc formation and structural evolution as a function of the annealing temperature and Si content.",

author = "N. Daldosso and G. Das and G. Dalba and S. Larcheri and R. Grisenti and G. Mariotto and L. Pavesi and F. Rocca and F. Priolo and G. Franz{\`o} and A. Irrera and M. Miritello and D. Pacifici and F. Iacona",

year = "2003",

doi = "10.1557/proc-770-i1.3",

language = "English (US)",

volume = "770",

pages = "45--50",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Optoelectronics of Group-IV-Based Materials ; Conference date: 21-04-2003 Through 24-04-2003",

}

Daldosso, N, Das, G, Dalba, G, Larcheri, S, Grisenti, R, Mariotto, G, Pavesi, L, Rocca, F, Priolo, F, Franzò, G, Irrera, A, Miritello, M, Pacifici, D & Iacona, F 2003, 'Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiO_x Films', Materials Research Society Symposium - Proceedings, vol. 770, pp. 45-50. https://doi.org/10.1557/proc-770-i1.3

TY - JOUR

T1 - Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiOx Films

AU - Daldosso, N.

AU - Das, G.

AU - Dalba, G.

AU - Larcheri, S.

AU - Grisenti, R.

AU - Mariotto, G.

AU - Pavesi, L.

AU - Rocca, F.

AU - Priolo, F.

AU - Franzò, G.

AU - Irrera, A.

AU - Miritello, M.

AU - Pacifici, D.

AU - Iacona, F.

PY - 2003

Y1 - 2003

N2 - Si nanocrystals (Si-nc) embedded in amorphous silica matrix have been obtained by thermal annealing of substoichiometric SiOx films, deposited by PECVD (plasma enhanced chemical vapour deposition) technique with different amount of Si concentrations (42 and 46 at.%). Both nucleation and evolution of Si-nc together with the changes of the amorphous matrix have been studied as a function of the annealing temperature. The comparison of x-ray absorption measurements in Total Electron Yield (TEY) mode at the Si k-edge with photoluminescence (PL), FTIR and Raman spectra, allowed clarifying the processes of Si-nc formation and structural evolution as a function of the annealing temperature and Si content.

AB - Si nanocrystals (Si-nc) embedded in amorphous silica matrix have been obtained by thermal annealing of substoichiometric SiOx films, deposited by PECVD (plasma enhanced chemical vapour deposition) technique with different amount of Si concentrations (42 and 46 at.%). Both nucleation and evolution of Si-nc together with the changes of the amorphous matrix have been studied as a function of the annealing temperature. The comparison of x-ray absorption measurements in Total Electron Yield (TEY) mode at the Si k-edge with photoluminescence (PL), FTIR and Raman spectra, allowed clarifying the processes of Si-nc formation and structural evolution as a function of the annealing temperature and Si content.

UR - http://www.scopus.com/inward/record.url?scp=12144288313&partnerID=8YFLogxK

U2 - 10.1557/proc-770-i1.3

DO - 10.1557/proc-770-i1.3

M3 - Conference article

AN - SCOPUS:12144288313

SN - 0272-9172

VL - 770

SP - 45

EP - 50

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Optoelectronics of Group-IV-Based Materials

Y2 - 21 April 2003 through 24 April 2003

ER -

Silicon Nanocrystal Nucleation as a Function of the Annealing Temperature in SiO_x Films

Abstract

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