Abstract
The ever-increasing electricity demand from renewables has stimulated growth in the photovoltaic (PV) industry. Yet, while grid parity has already been achieved in several countries, a continued decline in module prices coupled with further efficiency improvements at an annual growth rate of ∼0.5%abs are needed to sustain its market growth. Mainstream PV technologies are still based on crystalline silicon (c-Si) wafers with heavily doped regions and directly metallized contacts. However, these cause band-gap narrowing, Auger recombination losses, and contact recombination losses. Passivating contact (PC) technologies can overcome these limitations by decoupling surface passivation and contact formation requirements. Among PC technologies, amorphous silicon-based silicon heterojunction (SHJ) solar cells have established the world record power conversion efficiency for single-junction c-Si PV. Due to their excellent performance and simple design, they are also the preferred bottom cell technology for perovskite/silicon tandems. Nevertheless, SHJ technology accounts for only ∼2% of the current PV market share. In this review, we discuss the techno-economic challenges for large-volume SHJ manufacturing. In doing so, we highlight critical areas that need to be addressed for enabling terawatt-scale SHJ deployment.
Original language | English (US) |
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Pages (from-to) | 514-542 |
Number of pages | 29 |
Journal | Joule |
Volume | 6 |
Issue number | 3 |
DOIs | |
State | Published - Mar 16 2022 |
Bibliographical note
Publisher Copyright:© 2022 Elsevier Inc.
Keywords
- passivating contacts
- silicon heterojunction
- silicon photovoltaics
ASJC Scopus subject areas
- General Energy