Silicon heterojunction solar cell with passivated hole selective MoO x contact

Corsin Battaglia; Silvia Martín De Nicolás; Stefaan De Wolf; Xingtian Yin; Maxwell Zheng; Christophe Ballif; Ali Javey

doi:10.1063/1.4868880

Silicon heterojunction solar cell with passivated hole selective MoO _x contact

Corsin Battaglia, Silvia Martín De Nicolás, Stefaan De Wolf, Xingtian Yin, Maxwell Zheng, Christophe Ballif, Ali Javey^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

358 Scopus citations

Abstract

We explore substoichiometric molybdenum trioxide (MoO_x, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO _x, we observe a substantial gain in photocurrent of 1.9 mA/cm ² in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

Original language	English (US)
Article number	113902
Journal	Applied Physics Letters
Volume	104
Issue number	11
DOIs	https://doi.org/10.1063/1.4868880
State	Published - Mar 17 2014
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{0323f3cc1be44d68b3407a02abb5b6bd,

title = "Silicon heterojunction solar cell with passivated hole selective MoO x contact",

abstract = "We explore substoichiometric molybdenum trioxide (MoOx, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO x, we observe a substantial gain in photocurrent of 1.9 mA/cm 2 in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.",

author = "Corsin Battaglia and {De Nicol{\'a}s}, {Silvia Mart{\'i}n} and {De Wolf}, Stefaan and Xingtian Yin and Maxwell Zheng and Christophe Ballif and Ali Javey",

year = "2014",

month = mar,

day = "17",

doi = "10.1063/1.4868880",

language = "English (US)",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "11",

}

TY - JOUR

T1 - Silicon heterojunction solar cell with passivated hole selective MoO x contact

AU - Battaglia, Corsin

AU - De Nicolás, Silvia Martín

AU - De Wolf, Stefaan

AU - Yin, Xingtian

AU - Zheng, Maxwell

AU - Ballif, Christophe

AU - Javey, Ali

PY - 2014/3/17

Y1 - 2014/3/17

N2 - We explore substoichiometric molybdenum trioxide (MoOx, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO x, we observe a substantial gain in photocurrent of 1.9 mA/cm 2 in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

AB - We explore substoichiometric molybdenum trioxide (MoOx, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO x, we observe a substantial gain in photocurrent of 1.9 mA/cm 2 in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=84897869695&partnerID=8YFLogxK

U2 - 10.1063/1.4868880

DO - 10.1063/1.4868880

M3 - Article

AN - SCOPUS:84897869695

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 113902

ER -

Silicon heterojunction solar cell with passivated hole selective MoO _x contact

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