Silicon germanium as a novel mask for silicon deep reactive ion etching

Mohamed Y. Serry, Andrew Rubin, Mohammed Aziz Ibrahem, Sherif M. Sedky

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0 - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.
Original languageEnglish (US)
Pages (from-to)1081-1088
Number of pages8
JournalJournal of Microelectromechanical Systems
Issue number5
StatePublished - Oct 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering


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