Silicon germanium as a novel mask for silicon deep reactive ion etching

Mohamed Y. Serry; Andrew Rubin; Mohammed Aziz Ibrahem; Sherif M. Sedky

doi:10.1109/JMEMS.2013.2269673

Silicon germanium as a novel mask for silicon deep reactive ion etching

Mohamed Y. Serry, Andrew Rubin, Mohammed Aziz Ibrahem, Sherif M. Sedky

Imaging & Characterization Core Lab

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12 Scopus citations

Abstract

This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0 - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

Original language	English (US)
Pages (from-to)	1081-1088
Number of pages	8
Journal	Journal of Microelectromechanical Systems
Volume	22
Issue number	5
DOIs	https://doi.org/10.1109/JMEMS.2013.2269673 https://doi.org/10.1109/MEMSYS.2012.6170159
State	Published - Oct 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

Mechanical Engineering
Electrical and Electronic Engineering

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title = "Silicon germanium as a novel mask for silicon deep reactive ion etching",

abstract = "This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0 - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. {\textcopyright} 1992-2012 IEEE.",

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AU - Rubin, Andrew

AU - Ibrahem, Mohammed Aziz

AU - Sedky, Sherif M.

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PY - 2013/10

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N2 - This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0 - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

AB - This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0 - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

UR - http://hdl.handle.net/10754/563023

UR - http://ieeexplore.ieee.org/document/6567944/

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DO - 10.1109/JMEMS.2013.2269673

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JO - Journal of Microelectromechanical Systems

JF - Journal of Microelectromechanical Systems

IS - 5

ER -

Silicon germanium as a novel mask for silicon deep reactive ion etching

Abstract

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