Abstract
This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0 - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.
Original language | English (US) |
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Pages (from-to) | 1081-1088 |
Number of pages | 8 |
Journal | Journal of Microelectromechanical Systems |
Volume | 22 |
Issue number | 5 |
DOIs | |
State | Published - Oct 2013 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering