Silicon-Compatible Photodetectors: Trends to Monolithically Integrate Photosensors with Chip Technology

Wei Yang, Jiaxin Chen, Yong Zhang, Yujia Zhang, Jr-Hau He, Xiaosheng Fang

Research output: Contribution to journalArticlepeer-review

225 Scopus citations


Encouraged by the increasing requirements of intelligent equipment, silicon integrated circuit–compatible photodetectors that support single-chip photonic–electronic systems have gained considerable progresses. Advanced materials have resulted in enhanced device performance based on traditional photovoltaic effect and photoconductive effect, and novel device designs have catalyzed new working mechanisms combing rapid photoresponse and high responsivity gain. Surprising applications are developed using monolithic photonic–electronic platforms, and the developing integration strategies keep pace with the developing complementary metal-oxide-semiconductor techniques as well as nonsilicon substrates. Here, the recent developments in silicon-compatible photodetectors, both in device advances and their integration routes, are reviewed. Meanwhile, the progresses, challenges, and possible future directions in this field are discussed and concluded.
Original languageEnglish (US)
Pages (from-to)1808182
JournalAdvanced Functional Materials
Issue number18
StatePublished - Feb 25 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Key Research and Development Program of China (Grant No. 2017YFA0204600), the National Natural Science Foundation of China (Grant Nos. 51721002, 51872050, 11674061, and 11811530065), Science and Technology Commission of Shanghai Municipality (Grant Nos. 18520744600, 18520710800, and 17520742400), and National Program for Support of Top-notch Young Professionals.


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