Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy

Daisuke Iida; Takeshi Kawashima; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki

doi:10.1002/pssc.200778502

Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy

Daisuke Iida, Takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

16 Scopus citations

Abstract

A major obstacle to achieving high-performance devices using nonpolar a-plane and m-plane GaN is the existence of high-density threading dislocations and stacking faults. Low-defect-density nonpolar plane GaN films were previously grown by sidewall epitaxial overgrowth using metalorganic vapor phase epitaxy [1, 2]. In this study, we control the growth-rate ratio of Ga-polar GaN to N-polar GaN by adjusting the V/III ratio. It is possible to grow GaN only from the N-face sidewall of grooves by maintaining a high V/III ratio, which reduces the number of coalescence regions on grooves and decreases the threading-dislocation density and stacking-fault density. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Original language	English (US)
Title of host publication	Physica Status Solidi (C) Current Topics in Solid State Physics
Pages	1575-1578
Number of pages	4
DOIs	https://doi.org/10.1002/pssc.200778502
State	Published - Dec 1 2008
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200778502

Cite this

@inproceedings{173aa578d5ff4edd8f4ef834dd077552,

title = "Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy",

abstract = "A major obstacle to achieving high-performance devices using nonpolar a-plane and m-plane GaN is the existence of high-density threading dislocations and stacking faults. Low-defect-density nonpolar plane GaN films were previously grown by sidewall epitaxial overgrowth using metalorganic vapor phase epitaxy [1, 2]. In this study, we control the growth-rate ratio of Ga-polar GaN to N-polar GaN by adjusting the V/III ratio. It is possible to grow GaN only from the N-face sidewall of grooves by maintaining a high V/III ratio, which reduces the number of coalescence regions on grooves and decreases the threading-dislocation density and stacking-fault density. {\textcopyright} 2008 Wiley-VCH Verlag GmbH & Co. KGaA.",

author = "Daisuke Iida and Takeshi Kawashima and Motoaki Iwaya and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki",

note = "Generated from Scopus record by KAUST IRTS on 2023-09-21",

year = "2008",

month = dec,

day = "1",

doi = "10.1002/pssc.200778502",

language = "English (US)",

pages = "1575--1578",

booktitle = "Physica Status Solidi (C) Current Topics in Solid State Physics",

}

TY - GEN

T1 - Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy

AU - Iida, Daisuke

AU - Kawashima, Takeshi

AU - Iwaya, Motoaki

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2008/12/1

Y1 - 2008/12/1

N2 - A major obstacle to achieving high-performance devices using nonpolar a-plane and m-plane GaN is the existence of high-density threading dislocations and stacking faults. Low-defect-density nonpolar plane GaN films were previously grown by sidewall epitaxial overgrowth using metalorganic vapor phase epitaxy [1, 2]. In this study, we control the growth-rate ratio of Ga-polar GaN to N-polar GaN by adjusting the V/III ratio. It is possible to grow GaN only from the N-face sidewall of grooves by maintaining a high V/III ratio, which reduces the number of coalescence regions on grooves and decreases the threading-dislocation density and stacking-fault density. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

AB - A major obstacle to achieving high-performance devices using nonpolar a-plane and m-plane GaN is the existence of high-density threading dislocations and stacking faults. Low-defect-density nonpolar plane GaN films were previously grown by sidewall epitaxial overgrowth using metalorganic vapor phase epitaxy [1, 2]. In this study, we control the growth-rate ratio of Ga-polar GaN to N-polar GaN by adjusting the V/III ratio. It is possible to grow GaN only from the N-face sidewall of grooves by maintaining a high V/III ratio, which reduces the number of coalescence regions on grooves and decreases the threading-dislocation density and stacking-fault density. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.200778502

UR - http://www.scopus.com/inward/record.url?scp=56249096960&partnerID=8YFLogxK

U2 - 10.1002/pssc.200778502

DO - 10.1002/pssc.200778502

M3 - Conference contribution

SP - 1575

EP - 1578

BT - Physica Status Solidi (C) Current Topics in Solid State Physics

ER -

Sidewall epitaxial lateral overgrowth of nonpolar a-plane GaN by metalorganic vapor phase epitaxy

Abstract

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