TY - GEN
T1 - Si substrate controlled in-plane synthesis of self-assembled nanostructures catalyzed by Au nanoparticles
AU - Zhang, Zhou
AU - Wong, Lai Mun
AU - Wang, Shijie
AU - Wu, Tom
PY - 2010
Y1 - 2010
N2 - Self-assembled in-plane fabrication of Cu3Si and Mg 2SiO4 nanostructures were achieved on Si substrates by a simple vapor transport method. The morphologies of the as fabricated structures were controlled by the surface orientation of the substrates, i.e. Cu 3Si nanowires (NWs), nanosquares (NSs), and nanotriangles (NTs) were synthesized on Si (110), (100), and (111) substrates, respectively. In the case of Mg2SiO4, NWs with specific growth directions were observed. All the sides of the NTs & NSs and the growth directions of the NWs are along Si 〈110〉, indicating that the symmetries of nanostructure growth break into 2, 4, and 6 folds on Si (110), (100), and (111). Au nanoparticles (NPs) were used as the catalyst and played critical roles by absorbing metal vapor and breaking the barrier of native oxide layer on Si substrates. The positions of the as fabricated nanostructures were controlled by the Au NPs and the growth of Mg2SiO4 NWs can work as a mechanism for transporting Au NPs along specific directions.
AB - Self-assembled in-plane fabrication of Cu3Si and Mg 2SiO4 nanostructures were achieved on Si substrates by a simple vapor transport method. The morphologies of the as fabricated structures were controlled by the surface orientation of the substrates, i.e. Cu 3Si nanowires (NWs), nanosquares (NSs), and nanotriangles (NTs) were synthesized on Si (110), (100), and (111) substrates, respectively. In the case of Mg2SiO4, NWs with specific growth directions were observed. All the sides of the NTs & NSs and the growth directions of the NWs are along Si 〈110〉, indicating that the symmetries of nanostructure growth break into 2, 4, and 6 folds on Si (110), (100), and (111). Au nanoparticles (NPs) were used as the catalyst and played critical roles by absorbing metal vapor and breaking the barrier of native oxide layer on Si substrates. The positions of the as fabricated nanostructures were controlled by the Au NPs and the growth of Mg2SiO4 NWs can work as a mechanism for transporting Au NPs along specific directions.
UR - http://www.scopus.com/inward/record.url?scp=77951655512&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424568
DO - 10.1109/INEC.2010.5424568
M3 - Conference contribution
AN - SCOPUS:77951655512
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 120
EP - 121
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -