Si-nanocrystals/SiO2 thin films obtained by pyrolysis of sol-gel precursors

G. Das; L. Ferraioli; P. Bettotti; F. De Angelis; G. Mariotto; L. Pavesi; E. Di Fabrizio; G. D. Soraru

doi:10.1016/j.tsf.2007.12.007

Si-nanocrystals/SiO₂ thin films obtained by pyrolysis of sol-gel precursors

G. Das^*, L. Ferraioli, P. Bettotti, F. De Angelis, G. Mariotto, L. Pavesi, E. Di Fabrizio, G. D. Soraru

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Polymer pyrolysis to nanoceramics is employed for the production of photo-luminescent thin film samples, consisting of Si-nanocrystals dispersed in silica matrix. Thin films were deposited on Si wafer by spin-coating technique from a triethoxysilane-derived sol-gel solution. This is a fast process and a low cost technique. Samples were annealed at different temperatures between 600 °C and 1300 °C, under N₂ gas atmosphere. Structural evolution and luminescence from Si-ncs vs. temperature were investigated by FT-IR absorption spectroscopy and photo-luminescence. Absorption spectrum of As-Prep sample shows several vibrational bands due to Si-H, C-H_x, and Si-O-Si structural units, without any appreciable luminescence. Silica phase segregation and intense PL (790 nm) due to Si-ncs were observed on annealing at T > 1000 °C.

Original language	English (US)
Pages (from-to)	6804-6807
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2007.12.007
State	Published - Aug 30 2008
Externally published	Yes

Keywords

Fourier transform infrared absorption spectroscopy
Photo-luminescence
Polymer pyrolysis
Si-nanocrystals
Sol-gel

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2007.12.007

Cite this

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title = "Si-nanocrystals/SiO2 thin films obtained by pyrolysis of sol-gel precursors",

abstract = "Polymer pyrolysis to nanoceramics is employed for the production of photo-luminescent thin film samples, consisting of Si-nanocrystals dispersed in silica matrix. Thin films were deposited on Si wafer by spin-coating technique from a triethoxysilane-derived sol-gel solution. This is a fast process and a low cost technique. Samples were annealed at different temperatures between 600 °C and 1300 °C, under N2 gas atmosphere. Structural evolution and luminescence from Si-ncs vs. temperature were investigated by FT-IR absorption spectroscopy and photo-luminescence. Absorption spectrum of As-Prep sample shows several vibrational bands due to Si-H, C-Hx, and Si-O-Si structural units, without any appreciable luminescence. Silica phase segregation and intense PL (790 nm) due to Si-ncs were observed on annealing at T > 1000 °C.",

keywords = "Fourier transform infrared absorption spectroscopy, Photo-luminescence, Polymer pyrolysis, Si-nanocrystals, Sol-gel",

author = "G. Das and L. Ferraioli and P. Bettotti and {De Angelis}, F. and G. Mariotto and L. Pavesi and {Di Fabrizio}, E. and Soraru, {G. D.}",

year = "2008",

month = aug,

day = "30",

doi = "10.1016/j.tsf.2007.12.007",

language = "English (US)",

volume = "516",

pages = "6804--6807",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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T1 - Si-nanocrystals/SiO2 thin films obtained by pyrolysis of sol-gel precursors

AU - Das, G.

AU - Ferraioli, L.

AU - Bettotti, P.

AU - De Angelis, F.

AU - Mariotto, G.

AU - Pavesi, L.

AU - Di Fabrizio, E.

AU - Soraru, G. D.

PY - 2008/8/30

Y1 - 2008/8/30

N2 - Polymer pyrolysis to nanoceramics is employed for the production of photo-luminescent thin film samples, consisting of Si-nanocrystals dispersed in silica matrix. Thin films were deposited on Si wafer by spin-coating technique from a triethoxysilane-derived sol-gel solution. This is a fast process and a low cost technique. Samples were annealed at different temperatures between 600 °C and 1300 °C, under N2 gas atmosphere. Structural evolution and luminescence from Si-ncs vs. temperature were investigated by FT-IR absorption spectroscopy and photo-luminescence. Absorption spectrum of As-Prep sample shows several vibrational bands due to Si-H, C-Hx, and Si-O-Si structural units, without any appreciable luminescence. Silica phase segregation and intense PL (790 nm) due to Si-ncs were observed on annealing at T > 1000 °C.

AB - Polymer pyrolysis to nanoceramics is employed for the production of photo-luminescent thin film samples, consisting of Si-nanocrystals dispersed in silica matrix. Thin films were deposited on Si wafer by spin-coating technique from a triethoxysilane-derived sol-gel solution. This is a fast process and a low cost technique. Samples were annealed at different temperatures between 600 °C and 1300 °C, under N2 gas atmosphere. Structural evolution and luminescence from Si-ncs vs. temperature were investigated by FT-IR absorption spectroscopy and photo-luminescence. Absorption spectrum of As-Prep sample shows several vibrational bands due to Si-H, C-Hx, and Si-O-Si structural units, without any appreciable luminescence. Silica phase segregation and intense PL (790 nm) due to Si-ncs were observed on annealing at T > 1000 °C.

KW - Fourier transform infrared absorption spectroscopy

KW - Photo-luminescence

KW - Polymer pyrolysis

KW - Si-nanocrystals

KW - Sol-gel

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DO - 10.1016/j.tsf.2007.12.007

M3 - Article

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JO - Thin Solid Films

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