Petacene is one of the most promising organic semiconductors for thin-film transistors. Transport measurements in the past have established the presence of shallow traps but their origins have remained a mystery. Here we show that shallow traps in vapor-deposited crystalline pentacene thin films are due to local defects resulting from the sliding of pentacene molecules along their long molecular axis, while two-dimensional crystalline packing is maintained. Electronic structural calculation confirms that these sliding defects are shallow-charge traps with energies ≤100 meV above (below) the valence band maximum (conduction band minimum).
Bibliographical noteFunding Information:
This work was supported by the National Science Foundation through Grant No. DMR 0238307 and by the MRSEC Program under Award No. DMR-0212302.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)