Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system

Chao Shen, Changmin Lee, Edgars Stegenburgs, Jorge Alberto Holguin Lerma, Tien Khee Ng, Shuji Nakamura, Steven P. DenBaars, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon S. Ooi

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A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.
Original languageEnglish (US)
Pages (from-to)042201
JournalApplied Physics Express
Issue number4
StatePublished - Feb 28 2017

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