Abstract
A high-performance waveguide photodetector (WPD) integrated with a laser diode (LD) sharing the single InGaN/GaN quantum well active region is demonstrated on a semipolar GaN substrate. The photocurrent of the integrated WPD is effectively tuned by the emitted optical power from the LD. The responsivity ranges from 0.018 to 0.051 A/W with increasing reverse bias from 0 to 10 V. The WPD shows a large 3 dB modulation bandwidth of 230 MHz. The integrated device, being used for power monitoring and on-chip communication, paves the way towards the eventual realization of a III–nitride on-chip photonic system.
Original language | English (US) |
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Pages (from-to) | 042201 |
Journal | Applied Physics Express |
Volume | 10 |
Issue number | 4 |
DOIs | |
State | Published - Feb 28 2017 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: This work was supported by King Abdullah University of Science and Technology (KAUST) baseline funding (BAS/1/1614-01-01), King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KACST-KAUST-UCSB Solid-State Lighting Program.