Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

Sang Ho Oh; Benjamin P. Yonkee; Michael Cantore; Robert M. Farrell; James S. Speck; Shuji Nakamura; Steven P. DenBaars

doi:10.7567/APEX.9.102102

Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

Sang Ho Oh, Benjamin P. Yonkee, Michael Cantore, Robert M. Farrell, James S. Speck, Shuji Nakamura, Steven P. DenBaars

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We demonstrate 1 mm2 blue light-emitting diodes with a negligible efficiency droop up to ∼1 W. LEDs with 12- to 14-nm-thick single quantum wells were grown by metalorganic chemical vapor deposition on a free-standing semipolar (2021) GaN substrate. Packaged devices showed an external quantum efficiency of 42.3% at 20 A/cm2 with a negligible efficiency droop up to 991 mW at 900 mA. At 900 mA, the thermal droop and hot/cold factor were 8.2% and 0.92, respectively. The adoption of a thick active region resulted in excellent optical and thermal performance characteristics that are suitable for high-power lighting applications.

Original language	English (US)
Pages (from-to)	102102
Journal	Applied Physics Express
Volume	9
Issue number	10
DOIs	https://doi.org/10.7567/APEX.9.102102
State	Published - Sep 7 2016
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-08
Acknowledgements: This work was funded by the Solid State Lighting and Energy Electronics Center (SSLEEC) and KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was performed in the UCSB nanofabrication facility, part of the National Science Foundation (NSF)-funded Nanotechnology Infrastructure Network (NNIN) (ECS-03357650). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR-1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W",

abstract = "We demonstrate 1 mm2 blue light-emitting diodes with a negligible efficiency droop up to ∼1 W. LEDs with 12- to 14-nm-thick single quantum wells were grown by metalorganic chemical vapor deposition on a free-standing semipolar (2021) GaN substrate. Packaged devices showed an external quantum efficiency of 42.3% at 20 A/cm2 with a negligible efficiency droop up to 991 mW at 900 mA. At 900 mA, the thermal droop and hot/cold factor were 8.2% and 0.92, respectively. The adoption of a thick active region resulted in excellent optical and thermal performance characteristics that are suitable for high-power lighting applications.",

author = "Oh, {Sang Ho} and Yonkee, {Benjamin P.} and Michael Cantore and Farrell, {Robert M.} and Speck, {James S.} and Shuji Nakamura and DenBaars, {Steven P.}",

note = "KAUST Repository Item: Exported on 2022-06-08 Acknowledgements: This work was funded by the Solid State Lighting and Energy Electronics Center (SSLEEC) and KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was performed in the UCSB nanofabrication facility, part of the National Science Foundation (NSF)-funded Nanotechnology Infrastructure Network (NNIN) (ECS-03357650). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2016",

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doi = "10.7567/APEX.9.102102",

language = "English (US)",

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T1 - Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

AU - Oh, Sang Ho

AU - Yonkee, Benjamin P.

AU - Cantore, Michael

AU - Farrell, Robert M.

AU - Speck, James S.

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

N1 - KAUST Repository Item: Exported on 2022-06-08 Acknowledgements: This work was funded by the Solid State Lighting and Energy Electronics Center (SSLEEC) and KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was performed in the UCSB nanofabrication facility, part of the National Science Foundation (NSF)-funded Nanotechnology Infrastructure Network (NNIN) (ECS-03357650). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2016/9/7

Y1 - 2016/9/7

N2 - We demonstrate 1 mm2 blue light-emitting diodes with a negligible efficiency droop up to ∼1 W. LEDs with 12- to 14-nm-thick single quantum wells were grown by metalorganic chemical vapor deposition on a free-standing semipolar (2021) GaN substrate. Packaged devices showed an external quantum efficiency of 42.3% at 20 A/cm2 with a negligible efficiency droop up to 991 mW at 900 mA. At 900 mA, the thermal droop and hot/cold factor were 8.2% and 0.92, respectively. The adoption of a thick active region resulted in excellent optical and thermal performance characteristics that are suitable for high-power lighting applications.

AB - We demonstrate 1 mm2 blue light-emitting diodes with a negligible efficiency droop up to ∼1 W. LEDs with 12- to 14-nm-thick single quantum wells were grown by metalorganic chemical vapor deposition on a free-standing semipolar (2021) GaN substrate. Packaged devices showed an external quantum efficiency of 42.3% at 20 A/cm2 with a negligible efficiency droop up to 991 mW at 900 mA. At 900 mA, the thermal droop and hot/cold factor were 8.2% and 0.92, respectively. The adoption of a thick active region resulted in excellent optical and thermal performance characteristics that are suitable for high-power lighting applications.

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U2 - 10.7567/APEX.9.102102

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M3 - Article

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SP - 102102

JO - Applied Physics Express

JF - Applied Physics Express

IS - 10

ER -

Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

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