Semipolar III-nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

Sang Ho Oh, Benjamin P. Yonkee, Michael Cantore, Robert M. Farrell, James S. Speck, Shuji Nakamura, Steven P. DenBaars

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We demonstrate 1 mm2 blue light-emitting diodes with a negligible efficiency droop up to ∼1 W. LEDs with 12- to 14-nm-thick single quantum wells were grown by metalorganic chemical vapor deposition on a free-standing semipolar (2021) GaN substrate. Packaged devices showed an external quantum efficiency of 42.3% at 20 A/cm2 with a negligible efficiency droop up to 991 mW at 900 mA. At 900 mA, the thermal droop and hot/cold factor were 8.2% and 0.92, respectively. The adoption of a thick active region resulted in excellent optical and thermal performance characteristics that are suitable for high-power lighting applications.
Original languageEnglish (US)
Pages (from-to)102102
JournalApplied Physics Express
Volume9
Issue number10
DOIs
StatePublished - Sep 7 2016
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-08
Acknowledgements: This work was funded by the Solid State Lighting and Energy Electronics Center (SSLEEC) and KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was performed in the UCSB nanofabrication facility, part of the National Science Foundation (NSF)-funded Nanotechnology Infrastructure Network (NNIN) (ECS-03357650). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR-1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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