Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (2021) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm2 and a threshold voltage of 10.3 V in a semipolar (2021) III-nitride LD with ZnO top cladding.
Bibliographical noteKAUST Repository Item: Exported on 2022-06-08
Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California Santa Barbara (UCSB); Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and UCSB; National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); NSF Materials Research Science and Engineering Centers (MRSEC) Program (DMR-1121053). The authors would like to thank A. Hopkins of the UCSB nanofabrication facility for his help with developing the dicing process used to fabricate these devices.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics