@inproceedings{547964a6214c4a088a3fa66c1e20b7ae,
title = "Semiconductor quantum-dot based wideband emitter for optical sensors",
abstract = "We report a novel broadband superluminescent diode using InGaAs/GaAs self-assembled quantum-dots heterostructure. The three sections superluminescent diode consists of index-guided ridge-waveguide section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces low ripple spectrum under continuous wave operation (20°C) with wavelength peak at ∼1210 nm. The spectral bandwidth can be tuned from 71 to 94 nm by electrically addressing the individual section of device.",
author = "Djie, {Hery S.} and Dimas, {Clara E.} and Ooi, {Boon S.}",
year = "2005",
doi = "10.1109/ICSENS.2005.1597853",
language = "English (US)",
isbn = "0780390563",
series = "Proceedings of IEEE Sensors",
pages = "932--934",
booktitle = "Proceedings of the Fourth IEEE Conference on Sensors 2005",
note = "Fourth IEEE Conference on Sensors 2005 ; Conference date: 31-10-2005 Through 03-11-2005",
}