Semiconductor quantum-dot based wideband emitter for optical sensors

Hery S. Djie; Clara E. Dimas; Boon S. Ooi

doi:10.1109/ICSENS.2005.1597853

Semiconductor quantum-dot based wideband emitter for optical sensors

Hery S. Djie^*, Clara E. Dimas, Boon S. Ooi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

We report a novel broadband superluminescent diode using InGaAs/GaAs self-assembled quantum-dots heterostructure. The three sections superluminescent diode consists of index-guided ridge-waveguide section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces low ripple spectrum under continuous wave operation (20°C) with wavelength peak at ∼1210 nm. The spectral bandwidth can be tuned from 71 to 94 nm by electrically addressing the individual section of device.

Original language	English (US)
Title of host publication	Proceedings of the Fourth IEEE Conference on Sensors 2005
Pages	932-934
Number of pages	3
Volume	2005
DOIs	https://doi.org/10.1109/ICSENS.2005.1597853
State	Published - 2005
Externally published	Yes
Event	Fourth IEEE Conference on Sensors 2005 - Irvine, CA, United States Duration: Oct 31 2005 → Nov 3 2005

Other

Other	Fourth IEEE Conference on Sensors 2005
Country/Territory	United States
City	Irvine, CA
Period	10/31/05 → 11/3/05

ASJC Scopus subject areas

Engineering (miscellaneous)
Electrical and Electronic Engineering

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10.1109/ICSENS.2005.1597853

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title = "Semiconductor quantum-dot based wideband emitter for optical sensors",

abstract = "We report a novel broadband superluminescent diode using InGaAs/GaAs self-assembled quantum-dots heterostructure. The three sections superluminescent diode consists of index-guided ridge-waveguide section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces low ripple spectrum under continuous wave operation (20°C) with wavelength peak at ∼1210 nm. The spectral bandwidth can be tuned from 71 to 94 nm by electrically addressing the individual section of device.",

author = "Djie, {Hery S.} and Dimas, {Clara E.} and Ooi, {Boon S.}",

year = "2005",

doi = "10.1109/ICSENS.2005.1597853",

language = "English (US)",

isbn = "0780390563",

volume = "2005",

pages = "932--934",

booktitle = "Proceedings of the Fourth IEEE Conference on Sensors 2005",

note = "Fourth IEEE Conference on Sensors 2005 ; Conference date: 31-10-2005 Through 03-11-2005",

}

TY - GEN

T1 - Semiconductor quantum-dot based wideband emitter for optical sensors

AU - Djie, Hery S.

AU - Dimas, Clara E.

AU - Ooi, Boon S.

PY - 2005

Y1 - 2005

N2 - We report a novel broadband superluminescent diode using InGaAs/GaAs self-assembled quantum-dots heterostructure. The three sections superluminescent diode consists of index-guided ridge-waveguide section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces low ripple spectrum under continuous wave operation (20°C) with wavelength peak at ∼1210 nm. The spectral bandwidth can be tuned from 71 to 94 nm by electrically addressing the individual section of device.

AB - We report a novel broadband superluminescent diode using InGaAs/GaAs self-assembled quantum-dots heterostructure. The three sections superluminescent diode consists of index-guided ridge-waveguide section (4 μm wide) butt-connected to a broad-area photon absorber (50 μm wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces low ripple spectrum under continuous wave operation (20°C) with wavelength peak at ∼1210 nm. The spectral bandwidth can be tuned from 71 to 94 nm by electrically addressing the individual section of device.

UR - http://www.scopus.com/inward/record.url?scp=33847317477&partnerID=8YFLogxK

U2 - 10.1109/ICSENS.2005.1597853

DO - 10.1109/ICSENS.2005.1597853

M3 - Conference contribution

AN - SCOPUS:33847317477

SN - 0780390563

SN - 9780780390560

VL - 2005

SP - 932

EP - 934

BT - Proceedings of the Fourth IEEE Conference on Sensors 2005

T2 - Fourth IEEE Conference on Sensors 2005

Y2 - 31 October 2005 through 3 November 2005

ER -

Semiconductor quantum-dot based wideband emitter for optical sensors

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