Self-planarized quantum-disks nanowires ultraviolet-B emitter utilizing pendeo-epitaxy

Bilal Janjua, Haiding Sun, Chao Zhao, Dalaver H. Anjum, Feng Wu, Abdullah Alhamoud, Xiaohang Li, Abdulrahman M Albadri, Ahmed Y Alyamani, Munir M El-Desouki, Tien Khee Ng, Boon S. Ooi

Research output: Contribution to journalArticlepeer-review

37 Scopus citations


The growth of self-assembled, vertically oriented and uniform nanowires (NWs) has remained a challenge for efficient light-emitting devices. Here, we demonstrate dislocation-free AlGaN NWs with spontaneous coalescence, which are grown by plasma-assisted molecular beam epitaxy on an n-type doped silicon (100) substrate. A high density of NWs (filling factor > 95%) was achieved under optimized growth conditions, enabling device fabrication without planarization using ultraviolet (UV)-absorbing polymer materials. UV-B (280-320 nm) light-emitting diodes (LEDs), which emit at ~303 nm with a narrow full width at half maximum (FWHM) (~20 nm) of the emission spectrum, are demonstrated using a large active region (“active region/NW length-ratio” ~ 50%) embedded with 15 stacks of AlxGa1-xN/AlyGa1-yN quantum-disks (Qdisks). To improve the carrier injection, a graded layer is introduced at the AlGaN/GaN interfaces on both p- and n-type regions. This work demonstrates a viable approach to easily fabricate ultra-thin, efficient UV optoelectronic devices on low-cost and scalable silicon substrates.
Original languageEnglish (US)
Pages (from-to)7805-7813
Number of pages9
Issue number23
StatePublished - 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01.


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