Self-Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High-Performance Memristors

Fei Hui; Conghui Zhang; Huanhuan Yu; Tingting Han; Jonas Weber; Yaqing Shen; Yiping Xiao; Xiaohong Li; Zhijun Zhang; Peisong Liu

doi:10.1002/adfm.202302073

Self-Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High-Performance Memristors

Fei Hui, Conghui Zhang, Huanhuan Yu, Tingting Han, Jonas Weber, Yaqing Shen, Yiping Xiao, Xiaohong Li, Zhijun Zhang, Peisong Liu

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Janus 2D materials have drawn substantial attention recently owing to its extraordinary interface properties and promising applications in optoelectronic devices. However, the scalable fabrication of high-quality Janus 2D materials is still one of the main obstacles to hinder its implementation in the industry. Herein, a new method (called “chemical breakdown”) is developed to obtain large-area uniform Janus graphene oxide (J-GO) films with high-quality. Moreover, the first application of J-GO in the field of memristive devices is presented for neuromorphic computing. In particular, crossbar arrays of Ag/J-GO/Au memristive devices that exhibit threshold resistive switching (RS) with enhanced performance are fabricated, e.g., low leakage current (≈10−12 A), low operation voltage (≈0.3 V), high endurance (>12,000 cycles), and electro-synaptic plasticity. This work provides a novel strategy to obtain large-area, continuous and uniform Janus 2D films, and proposes a new application for Janus 2D materials in a hot topic (i.e., neuromorphic computing) within the field of solid-state microelectronics.

Original language	English (US)
Journal	Advanced Functional Materials
DOIs	https://doi.org/10.1002/adfm.202302073
State	Published - May 21 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-05-25
Acknowledgements: This work was supported by the National Natural Science Foundation of China (grant no. 62204224), the Startup Research Fund of Zhengzhou University (fund no. 125/32212040); the Science and Technology Major Project of Henan Province (no. 201111211400); the Natural Science Foundation of Henan Province (grant no. 202300410088); the Postdoctoral Science Foundation of China (no. 2022M721010); the Ministry of Science and Technology of China (grant no. 2019YFE0124200); the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, the Priority Academic Program Development of Jiangsu Higher Education Institutions, and Jiangsu Excellent Postdoctoral Program.

ASJC Scopus subject areas

Biomaterials
Electrochemistry
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/adfm.202302073

Cite this

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title = "Self-Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High-Performance Memristors",

abstract = "Janus 2D materials have drawn substantial attention recently owing to its extraordinary interface properties and promising applications in optoelectronic devices. However, the scalable fabrication of high-quality Janus 2D materials is still one of the main obstacles to hinder its implementation in the industry. Herein, a new method (called “chemical breakdown”) is developed to obtain large-area uniform Janus graphene oxide (J-GO) films with high-quality. Moreover, the first application of J-GO in the field of memristive devices is presented for neuromorphic computing. In particular, crossbar arrays of Ag/J-GO/Au memristive devices that exhibit threshold resistive switching (RS) with enhanced performance are fabricated, e.g., low leakage current (≈10−12 A), low operation voltage (≈0.3 V), high endurance (>12,000 cycles), and electro-synaptic plasticity. This work provides a novel strategy to obtain large-area, continuous and uniform Janus 2D films, and proposes a new application for Janus 2D materials in a hot topic (i.e., neuromorphic computing) within the field of solid-state microelectronics.",

author = "Fei Hui and Conghui Zhang and Huanhuan Yu and Tingting Han and Jonas Weber and Yaqing Shen and Yiping Xiao and Xiaohong Li and Zhijun Zhang and Peisong Liu",

note = "KAUST Repository Item: Exported on 2023-05-25 Acknowledgements: This work was supported by the National Natural Science Foundation of China (grant no. 62204224), the Startup Research Fund of Zhengzhou University (fund no. 125/32212040); the Science and Technology Major Project of Henan Province (no. 201111211400); the Natural Science Foundation of Henan Province (grant no. 202300410088); the Postdoctoral Science Foundation of China (no. 2022M721010); the Ministry of Science and Technology of China (grant no. 2019YFE0124200); the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, the Priority Academic Program Development of Jiangsu Higher Education Institutions, and Jiangsu Excellent Postdoctoral Program.",

year = "2023",

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doi = "10.1002/adfm.202302073",

language = "English (US)",

journal = "Advanced Functional Materials",

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AU - Hui, Fei

AU - Zhang, Conghui

AU - Yu, Huanhuan

AU - Han, Tingting

AU - Weber, Jonas

AU - Shen, Yaqing

AU - Xiao, Yiping

AU - Li, Xiaohong

AU - Zhang, Zhijun

AU - Liu, Peisong

N1 - KAUST Repository Item: Exported on 2023-05-25 Acknowledgements: This work was supported by the National Natural Science Foundation of China (grant no. 62204224), the Startup Research Fund of Zhengzhou University (fund no. 125/32212040); the Science and Technology Major Project of Henan Province (no. 201111211400); the Natural Science Foundation of Henan Province (grant no. 202300410088); the Postdoctoral Science Foundation of China (no. 2022M721010); the Ministry of Science and Technology of China (grant no. 2019YFE0124200); the Collaborative Innovation Centre of Suzhou Nano Science & Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, the Priority Academic Program Development of Jiangsu Higher Education Institutions, and Jiangsu Excellent Postdoctoral Program.

PY - 2023/5/21

Y1 - 2023/5/21

N2 - Janus 2D materials have drawn substantial attention recently owing to its extraordinary interface properties and promising applications in optoelectronic devices. However, the scalable fabrication of high-quality Janus 2D materials is still one of the main obstacles to hinder its implementation in the industry. Herein, a new method (called “chemical breakdown”) is developed to obtain large-area uniform Janus graphene oxide (J-GO) films with high-quality. Moreover, the first application of J-GO in the field of memristive devices is presented for neuromorphic computing. In particular, crossbar arrays of Ag/J-GO/Au memristive devices that exhibit threshold resistive switching (RS) with enhanced performance are fabricated, e.g., low leakage current (≈10−12 A), low operation voltage (≈0.3 V), high endurance (>12,000 cycles), and electro-synaptic plasticity. This work provides a novel strategy to obtain large-area, continuous and uniform Janus 2D films, and proposes a new application for Janus 2D materials in a hot topic (i.e., neuromorphic computing) within the field of solid-state microelectronics.

AB - Janus 2D materials have drawn substantial attention recently owing to its extraordinary interface properties and promising applications in optoelectronic devices. However, the scalable fabrication of high-quality Janus 2D materials is still one of the main obstacles to hinder its implementation in the industry. Herein, a new method (called “chemical breakdown”) is developed to obtain large-area uniform Janus graphene oxide (J-GO) films with high-quality. Moreover, the first application of J-GO in the field of memristive devices is presented for neuromorphic computing. In particular, crossbar arrays of Ag/J-GO/Au memristive devices that exhibit threshold resistive switching (RS) with enhanced performance are fabricated, e.g., low leakage current (≈10−12 A), low operation voltage (≈0.3 V), high endurance (>12,000 cycles), and electro-synaptic plasticity. This work provides a novel strategy to obtain large-area, continuous and uniform Janus 2D films, and proposes a new application for Janus 2D materials in a hot topic (i.e., neuromorphic computing) within the field of solid-state microelectronics.

UR - http://hdl.handle.net/10754/692023

UR - https://onlinelibrary.wiley.com/doi/10.1002/adfm.202302073

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DO - 10.1002/adfm.202302073

M3 - Article

SN - 1616-301X

JO - Advanced Functional Materials

JF - Advanced Functional Materials

ER -

Self-Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High-Performance Memristors

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