Self-assembled NiSi quantum-dot arrays on epitaxial Si0.7Ge 0.3 on (001)Si

W. W. Wu; J. H. He; S. L. Cheng; S. W. Lee; L. J. Chen

doi:10.1063/1.1605242

Self-assembled NiSi quantum-dot arrays on epitaxial Si_0.7Ge _0.3 on (001)Si

W. W. Wu^*, J. H. He, S. L. Cheng, S. W. Lee, L. J. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The self-assembled NiSi quantum dot arrays were grown on relaxed epitaxial Si_0.7Ge_0.3 on (001)Si. The two dimensional pseudohexagonal structure was achieved under the influence of repulsive stress between nanodots. The undulated templates helped in achieving the growth of ordered silicide quantum dots with selected periodicity and size.

Original language	English (US)
Pages (from-to)	1836-1838
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	9
DOIs	https://doi.org/10.1063/1.1605242
State	Published - Sep 1 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1605242

Cite this

@article{929b86b3bd3646b0b101edbb9358db4f,

title = "Self-assembled NiSi quantum-dot arrays on epitaxial Si0.7Ge 0.3 on (001)Si",

abstract = "The self-assembled NiSi quantum dot arrays were grown on relaxed epitaxial Si0.7Ge0.3 on (001)Si. The two dimensional pseudohexagonal structure was achieved under the influence of repulsive stress between nanodots. The undulated templates helped in achieving the growth of ordered silicide quantum dots with selected periodicity and size.",

author = "Wu, {W. W.} and He, {J. H.} and Cheng, {S. L.} and Lee, {S. W.} and Chen, {L. J.}",

year = "2003",

month = sep,

day = "1",

doi = "10.1063/1.1605242",

language = "English (US)",

volume = "83",

pages = "1836--1838",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "9",

}

TY - JOUR

T1 - Self-assembled NiSi quantum-dot arrays on epitaxial Si0.7Ge 0.3 on (001)Si

AU - Wu, W. W.

AU - He, J. H.

AU - Cheng, S. L.

AU - Lee, S. W.

AU - Chen, L. J.

PY - 2003/9/1

Y1 - 2003/9/1

N2 - The self-assembled NiSi quantum dot arrays were grown on relaxed epitaxial Si0.7Ge0.3 on (001)Si. The two dimensional pseudohexagonal structure was achieved under the influence of repulsive stress between nanodots. The undulated templates helped in achieving the growth of ordered silicide quantum dots with selected periodicity and size.

AB - The self-assembled NiSi quantum dot arrays were grown on relaxed epitaxial Si0.7Ge0.3 on (001)Si. The two dimensional pseudohexagonal structure was achieved under the influence of repulsive stress between nanodots. The undulated templates helped in achieving the growth of ordered silicide quantum dots with selected periodicity and size.

UR - http://www.scopus.com/inward/record.url?scp=0141605000&partnerID=8YFLogxK

U2 - 10.1063/1.1605242

DO - 10.1063/1.1605242

M3 - Article

AN - SCOPUS:0141605000

SN - 0003-6951

VL - 83

SP - 1836

EP - 1838

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Self-assembled NiSi quantum-dot arrays on epitaxial Si_0.7Ge _0.3 on (001)Si

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this