Self-assembled NiSi quantum-dot arrays on epitaxial Si0.7Ge 0.3 on (001)Si

W. W. Wu*, J. H. He, S. L. Cheng, S. W. Lee, L. J. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The self-assembled NiSi quantum dot arrays were grown on relaxed epitaxial Si0.7Ge0.3 on (001)Si. The two dimensional pseudohexagonal structure was achieved under the influence of repulsive stress between nanodots. The undulated templates helped in achieving the growth of ordered silicide quantum dots with selected periodicity and size.

Original languageEnglish (US)
Pages (from-to)1836-1838
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - Sep 1 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Self-assembled NiSi quantum-dot arrays on epitaxial Si0.7Ge 0.3 on (001)Si'. Together they form a unique fingerprint.

Cite this