GaInNAs/GaAs quantum dots (QDs) were grown by solid-source molecular beam epitaxy equipped with a radio frequency nitrogen (N2) plasma source for the first time. High-density (∼1010cm-2) GaInNAs QDs with small sizes (∼30 nm) were achieved. Reflection high-energy electron diffraction observation revealed that the formation of GaInNAs QDs follows the Stranski-Krastanow growth mode. The evolution of GaInNAs QDs was investigated by atomic force microscopy, and the amount of GaInNAs coverage was found to have a significant effect on the dot density, average size and aspect ratio. Low temperature (5K) photoluminescence measurement on the GaInNAs QDs showed that the incorporation of N into InGaAs effectively reduced the emission energy, and there is an optimal amount of GaInNAs coverage, which will produce QDs with maximum luminescence intensity.
- A1. Self-assembled quantum dots
- A3. Solid-source molecular beam epitaxy
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry