Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory

Ching Yuan Ho; Jr Hau He; Yuan Pul Chang; Chenhsin Lien

doi:10.1016/j.tsf.2009.05.048

Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory

Ching Yuan Ho^*, Jr Hau He, Yuan Pul Chang, Chenhsin Lien

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Selective epitaxial growth (SEG) silicon as sacrificial layer is proposed to circumvent junction leakage (I_jun) of bit line contact due to silicon substrate loss by high aspect ratio contact etching and spontaneous salicide formation. The result indicates that the appropriate SEG silicon in contact area significantly reduces I_jun about three orders compared with no SEG silicon. In addition, the SEG method provides acceptable Kelvin contact resistance. Furthermore, during salicide formation, the consumed ratio of titanium to silicon is 0.7. It is confirmed that the feasible approach not only prevents from I_jun deterioration but also adjusts contact resistance as well.

Original language	English (US)
Pages (from-to)	6850-6852
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	24
DOIs	https://doi.org/10.1016/j.tsf.2009.05.048
State	Published - Oct 30 2009
Externally published	Yes

Keywords

High aspect ratio contact
Junction leakage
Kelvin contact resistance
Selective epitaxial growth
Spontaneous salicide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2009.05.048

Cite this

@article{b643276fe76643e886ddad9dc0aac660,

title = "Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory",

abstract = "Selective epitaxial growth (SEG) silicon as sacrificial layer is proposed to circumvent junction leakage (Ijun) of bit line contact due to silicon substrate loss by high aspect ratio contact etching and spontaneous salicide formation. The result indicates that the appropriate SEG silicon in contact area significantly reduces Ijun about three orders compared with no SEG silicon. In addition, the SEG method provides acceptable Kelvin contact resistance. Furthermore, during salicide formation, the consumed ratio of titanium to silicon is 0.7. It is confirmed that the feasible approach not only prevents from Ijun deterioration but also adjusts contact resistance as well.",

keywords = "High aspect ratio contact, Junction leakage, Kelvin contact resistance, Selective epitaxial growth, Spontaneous salicide",

author = "Ho, {Ching Yuan} and He, {Jr Hau} and Chang, {Yuan Pul} and Chenhsin Lien",

year = "2009",

month = oct,

day = "30",

doi = "10.1016/j.tsf.2009.05.048",

language = "English (US)",

volume = "517",

pages = "6850--6852",

journal = "Thin Solid Films",

issn = "0040-6090",

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T1 - Selective epitaxial silicon growth in high aspect ratio contact on 70 nm node flash memory

AU - Ho, Ching Yuan

AU - He, Jr Hau

AU - Chang, Yuan Pul

AU - Lien, Chenhsin

PY - 2009/10/30

Y1 - 2009/10/30

N2 - Selective epitaxial growth (SEG) silicon as sacrificial layer is proposed to circumvent junction leakage (Ijun) of bit line contact due to silicon substrate loss by high aspect ratio contact etching and spontaneous salicide formation. The result indicates that the appropriate SEG silicon in contact area significantly reduces Ijun about three orders compared with no SEG silicon. In addition, the SEG method provides acceptable Kelvin contact resistance. Furthermore, during salicide formation, the consumed ratio of titanium to silicon is 0.7. It is confirmed that the feasible approach not only prevents from Ijun deterioration but also adjusts contact resistance as well.

AB - Selective epitaxial growth (SEG) silicon as sacrificial layer is proposed to circumvent junction leakage (Ijun) of bit line contact due to silicon substrate loss by high aspect ratio contact etching and spontaneous salicide formation. The result indicates that the appropriate SEG silicon in contact area significantly reduces Ijun about three orders compared with no SEG silicon. In addition, the SEG method provides acceptable Kelvin contact resistance. Furthermore, during salicide formation, the consumed ratio of titanium to silicon is 0.7. It is confirmed that the feasible approach not only prevents from Ijun deterioration but also adjusts contact resistance as well.

KW - High aspect ratio contact

KW - Junction leakage

KW - Kelvin contact resistance

KW - Selective epitaxial growth

KW - Spontaneous salicide

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U2 - 10.1016/j.tsf.2009.05.048

DO - 10.1016/j.tsf.2009.05.048

M3 - Article

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SN - 0040-6090

VL - 517

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JO - Thin Solid Films

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