See-through Ga2O3 solar-blind photodetectors for use in harsh environments

Tzu Chiao Wei, Dung Sheng Tsai, Parvaneh Ravadgar, Jr Jian Ke, Meng Lin Tsai, Der Hsien Lien, Chiung Yi Huang, Ray Hua Horng, Jr Hau He

Research output: Contribution to journalArticlepeer-review

81 Scopus citations


This paper demonstrates the higherature operation of fully transparent solar-blind deep ultraviolet (DUV) metal-semiconductor-metal (MSM) photodetectors (PDs) employing β-Ga2O3 thin films with transmittance up to 80% from 400 to 900 nm without image blurring. Even at a bias up to 200 V, the β-Ga2O3 MSM PDs show dark current as low as ∼1 nA. The dark current of β-Ga2O 3 MSM PDs under significantly different oxygen concentration in the ambiences are similar, indicating that the high inertness to surface effect. Moreover, the responsivity and the working temperature of β-Ga 2O3 MSM PDs at 10 V bias are 0.32 mA/W and as high as 700 K, respectively. Full recovery after 700-K operation demonstrates reliability and robustness of β-Ga2O3 PDs. The superior see-through features, electrical tolerance, inertness to surface effect, thermal stability, and solar-blind DUV photoresponse of β-Ga2O 3 MSM PDs support the use in next-generation DUV PDs applications under harsh environments.

Original languageEnglish (US)
Article number6809845
Pages (from-to)112-117
Number of pages6
JournalIEEE Journal on Selected Topics in Quantum Electronics
Issue number6
StatePublished - 2014


  • harsh environment
  • high temperature detection
  • photodetector
  • solar-blind

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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